Tack; Marnix

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tack; Marnix.The latest application filed is for "enhancement mode mishemt with gan channel regrowth under a gate area".

Company Profile

2.12.13

Tack; Marnix - Merelbeke BE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Enhancement mode MISHEMT with GaN channel regrowth under a gate area Grant 11,335,798 - Moens , et al. May 17, 2	2022-05-17
Enhancement Mode Mishemt With Gan Channel Regrowth Under A Gate Area App 20210210627 - MOENS; Peter ; et al.	2021-07-08
Process of forming an electronic device including an access region Grant 10,797,153 - Banerjee , et al. October 6, 2	2020-10-06
Process of forming an electronic device including an access region Grant 10,797,152 - Banerjee , et al. October 6, 2	2020-10-06
Process Of Forming An Electronic Device Including An Access Region App 20200006521 - BANERJEE; Abhishek ; et al.	2020-01-02
Electronic Device Including An Access Region And A Process Of Forming The Same App 20190371909 - BANERJEE; Abhishek ; et al.	2019-12-05
Electronic device including a HEMT with a segmented gate electrode Grant 9,929,261 - Moens , et al. March 27, 2	2018-03-27
Electronic Device Including A Hemt With A Segmented Gate Electrode And A Process Of Forming The Same App 20170294530 - MOENS; Peter ; et al.	2017-10-12
Electronic device and a transistor including a trench and a sidewall doped region Grant 8,648,398 - Roig-Guitart , et al. February 11, 2	2014-02-11
Electronic Device And A Transistor Including A Trench And A Sidewall Doped Region App 20130020637 - Roig-Guitart; Juame ; et al.	2013-01-24
Process of forming an electronic device including a trench and a conductive structure therein Grant 8,298,889 - Roig-Guitart , et al. October 30, 2	2012-10-30
Alignment of trench for MOS Grant 7,989,886 - Moens , et al. August 2, 2	2011-08-02
Double trench for isolation of semiconductor devices Grant 7,915,155 - Moens , et al. March 29, 2	2011-03-29
Electronic Device Including A Trench And A Conductive Structure Therein And A Process Of Forming The Same App 20100140698 - Roig-Guitart; Jaume ; et al.	2010-06-10
Semiconductor device with improved breakdown properties and manufacturing method thereof Grant 7,709,889 - Moens , et al. May 4, 2	2010-05-04
Double Trench For Isolation Of Semiconductor Devices App 20100105188 - MOENS; Peter ; et al.	2010-04-29
Alignment Of Trench For Mos App 20100065908 - MOENS; Peter ; et al.	2010-03-18
Double trench for isolation of semiconductor devices Grant 7,667,270 - Moens , et al. February 23, 2	2010-02-23
Alignment of trench for MOS Grant 7,608,510 - Moens , et al. October 27, 2	2009-10-27
Semiconductor Device With Improved Breakdown Properties And Manufacturing Method Thereof App 20090014785 - Moens; Peter ; et al.	2009-01-15
Alignment of trench for MOS App 20060249786 - Moens; Peter ; et al.	2006-11-09
Double trench for isolation of semiconductor devices App 20060244029 - Moens; Peter ; et al.	2006-11-02
Method of processing a high voltage p++/n-well junction and a device manufactured by the method App 20020070411 - Vermandel, Miguel ; et al.	2002-06-13

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