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name:-0.027119874954224
name:-0.020331859588623
name:-0.0034759044647217
Tabat; Martin D. Patent Filings

Tabat; Martin D.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tabat; Martin D..The latest application filed is for "compensated location specific processing apparatus and method".

Company Profile
3.22.24
  • Tabat; Martin D. - Nashua NH
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Compensated location specific processing apparatus and method
Grant 10,861,674 - Gwinn , et al. December 8, 2
2020-12-08
Compensated Location Specific Processing Apparatus And Method
App 20200066485 - Gwinn; Matthew C. ;   et al.
2020-02-27
Compensated location specific processing apparatus and method
Grant 10,497,540 - Gwinn , et al. De
2019-12-03
Compensated Location Specific Processing Apparatus And Method
App 20180197715 - Gwinn; Matthew C. ;   et al.
2018-07-12
Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials
Grant 9,324,567 - Tabat , et al. April 26, 2
2016-04-26
Gas Cluster Ion Beam Etching Process
App 20150270135 - Tabat; Martin D. ;   et al.
2015-09-24
Multiple nozzle gas cluster ion beam system
Grant 8,981,322 - Tabat , et al. March 17, 2
2015-03-17
Gas Cluster Ion Beam Etching Process For Achieving Target Etch Process Metrics For Multiple Materials
App 20130309872 - Tabat; Martin D. ;   et al.
2013-11-21
Gas cluster ion beam etching process for metal-containing materials
Grant 8,557,710 - Shao , et al. October 15, 2
2013-10-15
Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
Grant 8,512,586 - Tabat , et al. August 20, 2
2013-08-20
Gas cluster ion beam etching process for Si-containing and Ge-containing materials
Grant 8,513,138 - Shao , et al. August 20, 2
2013-08-20
Gas Cluster Ion Beam Etching Process for Etching Si-Containing, Ge-Containing, and Metal-Containing Materials
App 20130196509 - Tabat; Martin D. ;   et al.
2013-08-01
Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
Grant 8,455,060 - Tabat June 4, 2
2013-06-04
Gas Cluster Ion Beam Etching Process For Achieving Target Etch Process Metrics For Multiple Materials
App 20130059446 - TABAT; Martin D. ;   et al.
2013-03-07
GAS CLUSTER ION BEAM ETCHING PROCESS FOR Si-CONTAINING and Ge-CONTAINING MATERIALS
App 20130059445 - SHAO; Yan ;   et al.
2013-03-07
Gas Cluster Ion Beam Etching Process For Metal-containing Materials
App 20130059444 - SHAO; Yan ;   et al.
2013-03-07
Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
Grant 8,304,033 - Tabat , et al. November 6, 2
2012-11-06
Method for selectively etching areas of a substrate using a gas cluster ion beam
Grant 8,202,435 - Tabat June 19, 2
2012-06-19
Multiple nozzle gas cluster ion beam processing system and method of operating
Grant 8,097,860 - Tabat , et al. January 17, 2
2012-01-17
Method and system for directional growth using a gas cluster ion beam
Grant 7,905,199 - Hautala , et al. March 15, 2
2011-03-15
Method For Depositing Hydrogenated Diamond-like Carbon Films Using A Gas Cluster Ion Beam
App 20100209627 - Tabat; Martin D.
2010-08-19
Method For Forming Trench Isolation Using Gas Cluster Ion Beam Processing
App 20100193898 - Hautala; John J. ;   et al.
2010-08-05
Method Of Forming Trench Isolation Using A Multiple Nozzle Gas Cluster Ion Beam Process
App 20100193708 - Tabat; Martin D. ;   et al.
2010-08-05
Multiple Nozzle Gas Cluster Ion Beam Processing System And Method Of Operating
App 20100193472 - Tabat; Martin D. ;   et al.
2010-08-05
Multiple Nozzle Gas Cluster Ion Beam System
App 20100193701 - Tabat; Martin D. ;   et al.
2010-08-05
Method For Selectively Etching Areas Of A Substrate Using A Gas Cluster Ion Beam
App 20100025365 - Tabat; Martin D.
2010-02-04
Apparatus and method for reducing particulate contamination in gas cluster ion beam processing equipment
Grant 7,642,531 - Gwinn , et al. January 5, 2
2010-01-05
Method And System For Directional Growth Using A Gas Cluster Ion Beam
App 20090314954 - Hautala; John J. ;   et al.
2009-12-24
Method And System For Depositing Silicon Carbide Film Using A Gas Cluster Ion Beam
App 20090233004 - Sherman; Steven ;   et al.
2009-09-17
Method Of Introducing Material Into A Substrate By Gas-cluster Ion Beam Irradiation
App 20080245974 - Kirkpatrick; Allen R. ;   et al.
2008-10-09
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
Grant 7,410,890 - Kirkpatrick , et al. August 12, 2
2008-08-12
Apparatus And Method For Reducing Particulate Contamination In Gas Cluster Ion Beam Processing Equipment
App 20080048132 - Gwinn; Matthew C. ;   et al.
2008-02-28
Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products
Grant 7,259,036 - Borland , et al. August 21, 2
2007-08-21
Method and apparatus for improved processing with a gas-cluster ion beam
Grant 7,060,989 - Swenson , et al. June 13, 2
2006-06-13
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
App 20050277246 - Kirkpatrick, Allen R. ;   et al.
2005-12-15
Method and apparatus for improved processing with a gas-cluster ion beam
App 20050205802 - Swenson, David R. ;   et al.
2005-09-22
Methods of forming doped and un-doped strained semiconductor and semiconductor films by gas-cluster ion irradiation
App 20050181621 - Borland, John O. ;   et al.
2005-08-18
Method for patterning and etching film layers of semiconductor devices
Grant 5,607,601 - Loper , et al. March 4, 1
1997-03-04

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