Syrkin; Alexander

Patent Applications and Registrations

Patent applications and USPTO patent grants for Syrkin; Alexander.The latest application filed is for "methods for producing composite gan nanocolumns and light emitting structures made from the methods".

Company Profile

0.12.6

Syrkin; Alexander - Oceanside CA
Syrkin; Alexander - Montgomery Village MD
Syrkin; Alexander - Montgomery Villiage MD
Syrkin; Alexander - Gaithersburg MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods for producing composite GaN nanocolumns and light emitting structures made from the methods Grant 11,322,652 - Volkova , et al. May 3, 2	2022-05-03
Methods for Producing Composite GaN Nanocolumns and Light Emitting Structures Made from the Methods App 20170170363 - Volkova; Anna ; et al.	2017-06-15
Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner Grant 9,577,143 - Shapovalov , et al. February 21, 2	2017-02-21
Semi-polar III-nitride films and materials and method for making the same Grant 9,443,727 - Soukhoveev , et al. September 13, 2	2016-09-13
Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions Grant 9,023,673 - Shapovalov , et al. May 5, 2	2015-05-05
Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials Grant 8,992,684 - Kovalenkov , et al. March 31, 2	2015-03-31
Semi-Polar III-Nitride Films and Materials and Method for Making the Same App 20140353685 - Soukhoveev; Vitali ; et al.	2014-12-04
Method for substrate pretreatment to achieve high-quality III-nitride epitaxy Grant 8,728,938 - Ivantsov , et al. May 20, 2	2014-05-20
Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) Grant 8,673,074 - Usikov , et al. March 18, 2	2014-03-18
Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE) Grant 8,629,065 - Spiberg , et al. January 14, 2	2014-01-14
Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy App 20130337639 - Ivantsov; Vladimir ; et al.	2013-12-19
Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE) App 20110108954 - Spiberg; Philippe ; et al.	2011-05-12
Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE) App 20100012948 - Usikov; Alexander ; et al.	2010-01-21
Method of crystal growth and resulted structures Grant 6,579,359 - Mynbaeva , et al. June 17, 2	2003-06-17

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