Suzuki; Hisamitsu
Patent Applications and Registrations
Patent applications and USPTO patent grants for Suzuki; Hisamitsu.The latest application filed is for "semiconductor device".
- Suzuki; Hisamitsu - Kanagawa JP
- Suzuki; Hisamitsu - Tokyo JP
| Patent | Date |
|---|---|
| Semiconductor device Grant 9,461,036 - Suzuki October 4, 2 | 2016-10-04 |
| Semiconductor Device App 20150340315 - SUZUKI; Hisamitsu | 2015-11-26 |
| Semiconductor Device App 20150303189 - SUZUKI; Hisamitsu | 2015-10-22 |
| Semiconductor device Grant 9,130,061 - Suzuki September 8, 2 | 2015-09-08 |
| Semiconductor Device App 20120032273 - SUZUKI; Hisamitsu | 2012-02-09 |
| Semiconductor device and method of fabricating same Grant 6,906,363 - Suzuki June 14, 2 | 2005-06-14 |
| Semiconductor device and method of fabricating same App 20040195586 - Suzuki, Hisamitsu | 2004-10-07 |
| Shallow trench isolation structure for a bipolar transistor Grant 6,737,721 - Suzuki May 18, 2 | 2004-05-18 |
| Semiconductor device and method for making the same Grant 6,667,202 - Suzuki December 23, 2 | 2003-12-23 |
| Bipolar/BiCMOS semiconductor device Grant 6,476,452 - Suzuki November 5, 2 | 2002-11-05 |
| Bipolar/bicmos Semiconductor Device App 20020130370 - Suzuki, Hisamitsu | 2002-09-19 |
| Semiconductor device and method for making the same App 20020011648 - Suzuki, Hisamitsu | 2002-01-31 |
| Semiconductor device having OHMIC connection that utilizes peak impurity concentration region Grant 6,265,747 - Suzuki July 24, 2 | 2001-07-24 |
| Semiconductor device and manufacturing method for same Grant 6,232,638 - Suzuki May 15, 2 | 2001-05-15 |
| Raised semiconductor MOS transistor with improved transistor characteristics Grant 5,990,530 - Suzuki November 23, 1 | 1999-11-23 |
| Method of producing a double-polysilicon bipolar transistor Grant 5,403,757 - Suzuki April 4, 1 | 1995-04-04 |
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