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name:-0.014600038528442
name:-0.016215085983276
name:-0.0037710666656494
Suvorov; Alexander V. Patent Filings

Suvorov; Alexander V.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Suvorov; Alexander V..The latest application filed is for "superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods".

Company Profile
3.14.13
  • Suvorov; Alexander V. - Durham NC
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Superjunction Power Semiconductor Devices Formed Via Ion Implantation Channeling Techniques And Related Methods
App 20210367029 - Van Brunt; Edward Robert ;   et al.
2021-11-25
Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
Grant 11,164,967 - Zhang , et al. November 2, 2
2021-11-02
Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods
Grant 11,075,264 - Van Brunt , et al. July 27, 2
2021-07-27
Power Silicon Carbide Based Mosfet Transistors With Improved Short Circuit Capabilities And Methods Of Making Such Devices
App 20190371931 - Zhang; Qingchun ;   et al.
2019-12-05
Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
Grant 10,424,660 - Zhang , et al. Sept
2019-09-24
Power Silicon Carbide Based Mosfet Transistors With Improved Short Circuit Capabilities And Methods Of Making Such Devices
App 20190198656 - Zhang; Qingchun ;   et al.
2019-06-27
Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
Grant 10,217,824 - Suvorov , et al. Feb
2019-02-26
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
Grant 10,103,230 - Van Brunt , et al. October 16, 2
2018-10-16
Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
Grant 9,984,881 - Sheppard , et al. May 29, 2
2018-05-29
Controlled Ion Implantation into Silicon Carbide Using Channeling and Devices Fabricated Using Controlled Ion Implantation into Silicon Carbide Using Channeling
App 20180069083 - Suvorov; Alexander V. ;   et al.
2018-03-08
Power semiconductor devices having gate trenches with implanted sidewalls and related methods
Grant 9,887,287 - Lichtenwalner , et al. February 6, 2
2018-02-06
Super Junction Power Semiconductor Devices Formed Via Ion Implantation Channeling Techniques And Related Methods
App 20170345891 - Van Brunt; Edward Robert ;   et al.
2017-11-30
Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
Grant 9,768,259 - Suvorov , et al. September 19, 2
2017-09-19
Methods of Forming Buried Junction Devices in Silicon Carbide Using Ion Implant Channeling and Silicon Carbide Devices Including Buried Junctions
App 20170084700 - Van Brunt; Edward Robert ;   et al.
2017-03-23
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
Grant 9,484,413 - Van Brunt , et al. November 1, 2
2016-11-01
Methods of Forming Buried Junction Devices in Silicon Carbide Using Ion Implant Channeling and Silicon Carbide Devices Including Buried Junctions
App 20150028351 - Van Brunt; Edward Robert ;   et al.
2015-01-29
Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling
App 20150028350 - Suvorov; Alexander V. ;   et al.
2015-01-29
Methods Of Fabricating Semiconductor Devices Including Implanted Regions For Providing Low-resistance Contact To Buried Layers And Related Devices
App 20140329367 - Sheppard; Scott T. ;   et al.
2014-11-06
Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
Grant 8,823,057 - Sheppard , et al. September 2, 2
2014-09-02
Methods of fabricating transistors using laser annealing of source/drain regions
Grant 8,216,924 - Suvorov July 10, 2
2012-07-10
Growing Polygonal Carbon From Photoresist
App 20110169013 - Suvorov; Alexander V.
2011-07-14
Methods Of Fabricating Transistors Using Laser Annealing Of Source/drain Regions
App 20110092057 - Suvorov; Alexander V.
2011-04-21
Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
Grant 7,476,594 - Suvorov January 13, 2
2009-01-13
Methods Of Fabricating Semiconductor Devices Including Implanted Regions For Providing Low-resistance Contact To Buried Layers And Related Devices
App 20080121895 - Sheppard; Scott T. ;   et al.
2008-05-29
Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
App 20060226482 - Suvorov; Alexander V.
2006-10-12
Method of forming green light emitting diode in silicon carbide
Grant 5,604,135 - Edmond , et al. February 18, 1
1997-02-18

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