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name:-0.0045561790466309
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Surdeanu; Radu Catalin Patent Filings

Surdeanu; Radu Catalin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Surdeanu; Radu Catalin.The latest application filed is for "method for forming a notched gate insulator for advanced mis semiconductor devices and devices thus obtained".

Company Profile
0.3.8
  • Surdeanu; Radu Catalin - Heverlee BE
  • Surdeanu; Radu Catalin - Leuven BE
  • Surdeanu; Radu Catalin - Roosbeek BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method for Forming a Notched Gate Insulator for Advanced MIS Semiconductor Devices and Devices Thus Obtained
App 20110309457 - Henson; Kirklen ;   et al.
2011-12-22
Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device
Grant 7,521,323 - Surdeanu , et al. April 21, 2
2009-04-21
Semiconductor Device and Method of Manufacturing a Semiconductor Device
App 20080150024 - Surdeanu; Radu Catalin ;   et al.
2008-06-26
Method And Apparatus For Forming A Semiconductor Substrate With A Layer Structure Of Activated Dopants
App 20070267660 - Surdeanu; Radu Catalin
2007-11-22
Method for forming a notched gate insulator for advanced MIS semiconductor devices and devices thus obtained
App 20070155118 - Henson; Kirklen ;   et al.
2007-07-05
Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants
Grant 7,214,592 - Surdeanu May 8, 2
2007-05-08
Semiconductor device and method of manufacturing such a semiconductor device
App 20070082450 - Van Dal; Marcus Johannes Henricus ;   et al.
2007-04-12
Method for forming a notched gate insulator for advanced MIS semiconductor devices and devices thus obtained
Grant 7,157,356 - Henson , et al. January 2, 2
2007-01-02
Gate electrode for semiconductor devices
App 20060197120 - Surdeanu; Radu Catalin ;   et al.
2006-09-07
Method for forming a notched gate insulator for advanced MIS semiconductor devices and devices thus obtained
App 20050127436 - Henson, Kirklen ;   et al.
2005-06-16
Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants
App 20050112831 - Surdeanu, Radu Catalin
2005-05-26

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