Sunakawa; Haruo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sunakawa; Haruo.The latest application filed is for "method for producing group 13 nitride single crystal and apparatus for producing group 13 nitride single crystal".

Company Profile

0.7.6

Sunakawa; Haruo - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method For Producing Group 13 Nitride Single Crystal And Apparatus For Producing Group 13 Nitride Single Crystal App 20180163323 - Satoh; Takashi ; et al.	2018-06-14
Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same Grant 6,809,351 - Kuramoto , et al. October 26, 2	2004-10-26
Base substrate for crystal growth and manufacturing method of substrate by using the same App 20030207125 - Sunakawa, Haruo ; et al.	2003-11-06
Method for manufacturing group III-V compound semiconductors Grant 6,555,845 - Sunakawa , et al. April 29, 2	2003-04-29
Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same App 20020168844 - Kuramoto, Masaru ; et al.	2002-11-14
Method for manufacturing group III-V compound semiconductors App 20020066403 - Sunakawa, Haruo ; et al.	2002-06-06
Method for manufacturing group III-V compound semiconductors Grant 6,348,096 - Sunakawa , et al. February 19, 2	2002-02-19
Method of manufacturing a nitrogen-based semiconductor substrate and a semiconductor element by using the same App 20010026950 - Sunakawa, Haruo ; et al.	2001-10-04
GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor Grant 6,252,261 - Usui , et al. June 26, 2	2001-06-26
Crystal growth method for gallium nitride films Grant 5,843,227 - Kimura , et al. December 1, 1	1998-12-01
Group VI doping of III-V semiconductors during ALE Grant 4,859,627 - Sunakawa August 22, 1	1989-08-22
Doping III-V compound semiconductor devices with group VI monolayers using ALE Grant 4,845,049 - Sunakawa July 4, 1	1989-07-04

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