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Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
Grant 11,410,996 - Yeo , et al. August 9, 2 | 2022-08-09 |
Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
Grant 11,164,864 - Yeo , et al. November 2, 2 | 2021-11-02 |
Method Of Dopant Deactivation Underneath Gate
App 20210234003 - SATHAIYA; Dhanyakumar Mahaveer ; et al. | 2021-07-29 |
Local Epitaxy Nanofilms for Nanowire Stack GAA Device
App 20210226005 - Yeh; Ling-Yen ; et al. | 2021-07-22 |
Conformal source and drain contacts for multi-gate field effect transistors
Grant 11,063,128 - Yeo , et al. July 13, 2 | 2021-07-13 |
Local epitaxy nanofilms for nanowire stack GAA device
Grant 11,043,556 - Yeh , et al. June 22, 2 | 2021-06-22 |
MOSFET with selective dopant deactivation underneath gate
Grant 10,985,246 - Sathaiya , et al. April 20, 2 | 2021-04-20 |
Field-Effect Transistors Having Transition Metal Dichalcogenide Channels and Methods of Manufacture
App 20200006337 - Yeo; Yee-Chia ; et al. | 2020-01-02 |
Local Epitaxy Nanofilms For Nanowire Stack Gaa Device
App 20190393305 - Yeh; Ling-Yen ; et al. | 2019-12-26 |
Mosfet With Selective Dopant Deactivation Underneath Gate
App 20190165104 - SATHAIYA; Dhanyakumar Mahaveer ; et al. | 2019-05-30 |
Conformal Source and Drain Contacts for Multi-Gate Field Effect Transistors
App 20190123157 - Yeo; Yee-Chia ; et al. | 2019-04-25 |
Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
Grant 10,269,791 - Yeo , et al. | 2019-04-23 |
Conformal source and drain contacts for multi-gate field effect transistors
Grant 10,164,033 - Yeo , et al. Dec | 2018-12-25 |
MOSFET with selective dopant deactivation underneath gate
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Field-Effect Transistors Having Transition Metal Dichalcogenide Channels and Methods of Manufacture
App 20180350806 - Yeo; Yee-Chia ; et al. | 2018-12-06 |
Conformal Source and Drain Contacts for Multi-Gate Field Effect Transistors
App 20170194442 - Yeo; Yee-Chia ; et al. | 2017-07-06 |
Conformal source and drain contacts for multi-gate field effect transistors
Grant 9,614,086 - Yeo , et al. April 4, 2 | 2017-04-04 |
Field-Effect Transistors Having Transition Metal Dichalcogenide Channels and Methods of Manufacture
App 20160276343 - Yeo; Yee-Chia ; et al. | 2016-09-22 |
Mosfet With Selective Dopant Deactivation Underneath Gate
App 20160005817 - SATHAIYA; Dhanyakumar Mahaveer ; et al. | 2016-01-07 |
MOSFET with selective dopant deactivation underneath gate
Grant 9,153,662 - Sathaiya , et al. October 6, 2 | 2015-10-06 |
Method and system for bonding 3D semiconductor device
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Mosfet With Slective Dopant Deactivation Underneath Gate
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Method and System for Bonding 3D Semiconductor Device
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Method and system for bonding 3D semiconductor devices
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MOS devices with source/drain regions having stressed regions and non-stressed regions
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Method and system for bonding 3D semiconductor devices
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Structure and methods for forming SiGe stressors
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Superconductor gate semiconductor channel field effect transistor
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