SUN; Tongnian

Patent Applications and Registrations

Patent applications and USPTO patent grants for SUN; Tongnian.The latest application filed is for "method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture".

Company Profile

3.3.6

SUN; Tongnian - Shijiazhuang Hebei
Sun; Tongnian - Hebei CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method For Preparing Indium Phosphide Crystal By Utilizing Indium-phosphorus Mixture App 20220081799 - SUN; Niefeng ; et al.	2022-03-17
Apparatus For Preparing Large-size Single Crystal App 20220074073 - WANG; Shujie ; et al.	2022-03-10
Growth method and apparatus for preparing high-yield crystals Grant 11,242,615 - Sun , et al. February 8, 2	2022-02-08
Growth Method and Apparatus for Preparing High-Yield Crystals App 20210355599 - SUN; Niefeng ; et al.	2021-11-18
Device and Method for Continuous VGF Crystal Growth through Reverse Injection Synthesis App 20210285123 - WANG; Shujie ; et al.	2021-09-16
Method For Carrying Out Phosphide In-situ Injection Synthesis By Carrier Gas App 20200157704 - SUN; Niefeng ; et al.	2020-05-21
Method for carrying out phosphide in-situ injection synthesis by carrier gas Grant 10,648,100 - Sun , et al.	2020-05-12
Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis Grant 10,519,563 - Wang , et al. Dec	2019-12-31
Device And Method For Continuous Vgf Crystal Growth Through Rotation After Horizontal Injection Synthesis App 20190352794 - WANG; Shujie ; et al.	2019-11-21

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