| Patent | Date |
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Double Magnetic Tunnel Junction Device
App 20220199898 - Hashemi; Pouya ; et al. | 2022-06-23 |
Resonant Synthetic Antiferromagnet Reference Layered Structure
App 20220157358 - Safranski; Christopher ; et al. | 2022-05-19 |
Inverted wide base double magnetic tunnel junction device
Grant 11,316,104 - Hashemi , et al. April 26, 2 | 2022-04-26 |
Modified double magnetic tunnel junction structure suitable for BEOL integration
Grant 11,171,283 - Sun November 9, 2 | 2021-11-09 |
Inverted Wide Base Double Magnetic Tunnel Junction Device
App 20210288246 - Hashemi; Pouya ; et al. | 2021-09-16 |
Modified Double Magnetic Tunnel Junction Structure Suitable For Beol Integration
App 20210135090 - Sun; Jonathan Zanhong | 2021-05-06 |
Spin-based Storage Element
App 20200312391 - Sun; Jonathan Zanhong | 2020-10-01 |
Spin-based storage element
Grant 10,777,247 - Sun Sept | 2020-09-15 |
Spin-current switchable magnetic memory element and method of fabricating the memory element
Grant 8,861,262 - Sun , et al. October 14, 2 | 2014-10-14 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 8,860,105 - Sun , et al. October 14, 2 | 2014-10-14 |
Spin-current Switched Magnetic Memory Element Suitable For Circuit Integration And Method Of Fabricating The Memory Element
App 20140008743 - Sun; Jonathan Zanhong ; et al. | 2014-01-09 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 8,558,332 - Sun , et al. October 15, 2 | 2013-10-15 |
Spin-current Switchable Magnetic Memory Element And Method Of Fabricating The Memory Element
App 20130009261 - Sun; Jonathan Zanhong ; et al. | 2013-01-10 |
Spin-torque Magnetoresistive Structures With Bilayer Free Layer
App 20120329177 - Abraham; David William ; et al. | 2012-12-27 |
Spin-current switchable magnetic memory element and method of fabricating the memory element
Grant 8,310,863 - Sun , et al. November 13, 2 | 2012-11-13 |
Methods for fabricating contacts to pillar structures in integrated circuits
Grant 8,008,095 - Assefa , et al. August 30, 2 | 2011-08-30 |
Spin-current Switched Magnetic Memory Element Suitable For Circuit Integration And Method Of Fabricating The Memory Element
App 20110147866 - Sun; Jonathan Zanhong ; et al. | 2011-06-23 |
Spin-current Switchable Magnetic Memory Element And Method Of Fabricating The Memory Element
App 20110124133 - Sun; Jonathan Zanhong ; et al. | 2011-05-26 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 7,943,399 - Sun , et al. May 17, 2 | 2011-05-17 |
Spin-current switchable magnetic memory element and method of fabricating the memory element
Grant 7,894,245 - Sun , et al. February 22, 2 | 2011-02-22 |
Spin-Torque Magnetoresistive Structures with Bilayer Free Layer
App 20100320550 - Abraham; David William ; et al. | 2010-12-23 |
Spin-current Switched Magnetic Memory Element Suitable For Circuit Integration And Method Of Fabricating The Memory Element
App 20090317923 - Sun; Jonathan Zanhong ; et al. | 2009-12-24 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 7,602,000 - Sun , et al. October 13, 2 | 2009-10-13 |
Methods for Fabricating Contacts to Pillar Structures in Integrated Circuits
App 20090091037 - Assefa; Solomon ; et al. | 2009-04-09 |
Phase-change memory cell and method of fabricating the phase-change memory cell
Grant 7,459,266 - Sun , et al. December 2, 2 | 2008-12-02 |
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
Grant 7,376,006 - Bednorz , et al. May 20, 2 | 2008-05-20 |
Spin-current Switchable Magnetic Memory Element And Method Of Fabricating The Memory Element
App 20080025082 - Sun; Jonathan Zanhong ; et al. | 2008-01-31 |
Spin-current switchable magnetic memory element and method of fabricating the memory element
Grant 7,313,013 - Sun , et al. December 25, 2 | 2007-12-25 |
Enhanced Programming Performance in a Nonvolatile Memory Device Having a Bipolar Programmable Storage Element
App 20070274125 - Bednorz; Johannes Georg ; et al. | 2007-11-29 |
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
App 20060256611 - Bednorz; Johannes Georg ; et al. | 2006-11-16 |
Spin-current switchable magnetic memory element and method of fabricating the memory element
App 20060104110 - Sun; Jonathan Zanhong ; et al. | 2006-05-18 |
Phase-change memory cell and method of fabricating the phase-change memory cell
App 20050227177 - Sun, Jonathan Zanhong ; et al. | 2005-10-13 |
Phase-change memory cell and method of fabricating the phase-change memory cell
Grant 6,936,840 - Sun , et al. August 30, 2 | 2005-08-30 |
Phase-change Memory Cell And Method Of Fabricating The Phase-change Memory Cell
App 20050167656 - Sun, Jonathan Zanhong ; et al. | 2005-08-04 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
App 20050104101 - Sun, Jonathan Zanhong ; et al. | 2005-05-19 |
Current-induced magnetic switching device and memory including the same
Grant 6,256,223 - Sun July 3, 2 | 2001-07-03 |
Current-induced magnetic switching device and memory including the same
Grant 6,130,814 - Sun October 10, 2 | 2000-10-10 |
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
Grant 5,841,692 - Gallagher , et al. November 24, 1 | 1998-11-24 |
Magnetic devices and sensors based on perovskite manganese oxide materials
Grant 5,792,569 - Sun , et al. August 11, 1 | 1998-08-11 |
Magnetic tunnel junctions with controlled magnetic response
Grant 5,650,958 - Gallagher , et al. July 22, 1 | 1997-07-22 |
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