Sumiyoshi; Kazuhide

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sumiyoshi; Kazuhide.The latest application filed is for "method of manufacturing high electron mobility transistor and high electron mobility transistor".

Company Profile

1.11.11

Sumiyoshi; Kazuhide - Osaka JP
Sumiyoshi; Kazuhide - Yokohama JP
SUMIYOSHI; Kazuhide - Yokohama-shi JP
Sumiyoshi; Kazuhide - Osaka-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of manufacturing high electron mobility transistor and high electron mobility transistor Grant 11,430,653 - Yamamura , et al. August 30, 2	2022-08-30
Method Of Manufacturing High Electron Mobility Transistor And High Electron Mobility Transistor App 20210104395 - YAMAMURA; Takuji ; et al.	2021-04-08
Method For Forming Silicon Nitride Passivation Film, Method For Manufacturing Semiconductor Device And Semiconductor Device App 20210066065 - SUMIYOSHI; Kazuhide ; et al.	2021-03-04
Process of forming silicon nitride (SiN) film and semiconductor device providing SiN film Grant 10,832,905 - Sumiyoshi November 10, 2	2020-11-10
Process of forming silicon nitride film Grant 10,741,384 - Sumiyoshi A	2020-08-11
Process of depositing silicon nitride (SiN) film on nitride semiconductor Grant 10,566,184 - Sumiyoshi Feb	2020-02-18
Process Of Forming Silicon Nitride (sin) Film And Semiconductor Device Providing Sin Film App 20190172706 - SUMIYOSHI; Kazuhide	2019-06-06
Semiconductor device Grant 10,283,609 - Sumiyoshi	2019-05-07
Process Of Forming Silicon Nitride Film App 20190103264 - SUMIYOSHI; Kazuhide	2019-04-04
PROCESS OF DEPOSITING SILICON NITRIDE (SiN) FILM ON NITRIDE SEMICONDUCTOR App 20180286661 - SUMIYOSHI; Kazuhide	2018-10-04
Semiconductor Device App 20180090584 - SUMIYOSHI; Kazuhide	2018-03-29
Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device Grant 9,425,348 - Saga , et al. August 23, 2	2016-08-23
Group Iii Nitride Semiconductor Device, And Method For Fabricating Group Iii Nitride Semiconductor Device App 20150115312 - Saga; Nobuhiro ; et al.	2015-04-30
Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate Grant 8,507,305 - Yoshizumi , et al. August 13, 2	2013-08-13
III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer Grant 8,502,310 - Shiomi , et al. August 6, 2	2013-08-06
Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device Grant 8,349,078 - Shiomi , et al. January 8, 2	2013-01-08
Group-iii Nitride Semiconductor Laser Device, Method Of Fabricating Group-iii Nitride Semiconductor Laser Device, And Epitaxial Substrate App 20120258557 - Yoshizumi; Yusuke ; et al.	2012-10-11
Power Device And Method For Manufacturing The Same App 20120104556 - KIYAMA; Makoto ; et al.	2012-05-03
Method Of Forming Nitride Semiconductor Epitaxial Layer And Method Of Manufacturing Nitride Semiconductor Device App 20110223749 - SHIOMI; Hiromu ; et al.	2011-09-15
Group-iii Nitride Semiconductor Laser Device, Method Of Fabricating Group-iii Nitride Semiconductor Laser Device, And Epitaxial Substrate App 20110158277 - YOSHIZUMI; Yusuke ; et al.	2011-06-30

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