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Patent applications and USPTO patent grants for Sumakeris; Joseph J..The latest application filed is for "minimizing degradation of sic bipolar semiconductor devices".
Patent | Date |
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Minimizing degradation of SiC bipolar semiconductor devices Grant 7,880,171 - Sumakeris , et al. February 1, 2 | 2011-02-01 |
Minimizing degradation of SiC bipolar semiconductor devices Grant 7,427,326 - Sumakeris , et al. September 23, 2 | 2008-09-23 |
Minimizing Degradation of SiC Bipolar Semiconductor Devices App 20070117336 - Sumakeris; Joseph J. ;   et al. | 2007-05-24 |
Minimizing degradation of SiC bipolar semiconductor devices App 20050116234 - Sumakeris, Joseph J. ;   et al. | 2005-06-02 |
Minimizing degradation of SiC bipolar semiconductor devices App 20050118746 - Sumakeris, Joseph J. ;   et al. | 2005-06-02 |
Minimizing degradation of SiC bipolar semiconductor devices Grant 6,849,874 - Sumakeris , et al. February 1, 2 | 2005-02-01 |
Silicon carbide inversion channel mosfets Grant 6,653,659 - Ryu , et al. November 25, 2 | 2003-11-25 |
Minimizing degradation of SiC bipolar semiconductor devices App 20030080842 - Sumakeris, Joseph J. ;   et al. | 2003-05-01 |
Silicon carbide inversion channel mosfets App 20020149022 - Ryu, Sei-Hyung ;   et al. | 2002-10-17 |
Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation Grant 6,429,041 - Ryu , et al. August 6, 2 | 2002-08-06 |
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