Sukegawa; Hiroaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sukegawa; Hiroaki.The latest application filed is for "magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction".

Company Profile

11.16.15

Sukegawa; Hiroaki - Ibaraki JP
Sukegawa; Hiroaki - Tsukuba JP
SUKEGAWA; Hiroaki - Tsukuba-shi JP
Sukegawa; Hiroaki - Ibaraki-ken JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Precursor structure of perpendicularly magnetized film, perpendicularly magnetized film structure and method for manufacturing the same, perpendicular magnetization-type magnetic tunnel junction film in which said structure is used and method for manufacturing the same, and perpendicular magnetizati Grant 11,374,168 - Sukegawa , et al. June 28, 2	2022-06-28
Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction Grant 11,107,976 - Sukegawa , et al. August 31, 2	2021-08-31
Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction Grant 11,105,867 - Sukegawa , et al. August 31, 2	2021-08-31
Magnetic Tunnel Junction, Magnetoresistive Element And Spintronics Device In Which Said Magnetic Tunnel Junction Is Used, And Method Of Manufacturing Magnetic Tunnel Junction App 20210123991 - SUKEGAWA; Hiroaki ; et al.	2021-04-29
Precursor Structure Of Perpendicularly Magnetized Film, Perpendicularly Magnetized Film Structure And Method For Manufacturing The Same, Perpendicular Magnetization-type Magnetic Tunnel Junction Film In Which Said Structure Is Used And Method For Manufacturing The Same, And Perpendicular Magnetizati App 20200357985 - SUKEGAWA; Hiroaki ; et al.	2020-11-12
Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same Grant 10,832,719 - Sukegawa , et al. November 10, 2	2020-11-10
Monocrystalline magneto resistance element, method for producing the same and method for using same Grant 10,749,105 - Chen , et al. A	2020-08-18
Magnetoresistance effect element and method for manufacturing the same Grant 10,665,776 - Ichikawa , et al.	2020-05-26
Magnetic Tunnel Junction, Spintronics Device Using Same, And Method For Manufacturing Magnetic Tunnel Junction App 20200044144 - SUKEGAWA; Hiroaki ; et al.	2020-02-06
Perpendicular magnetic layer and magnetic device including the same Grant 10,395,809 - Takahashi , et al. A	2019-08-27
Magnetoresistance Effect Element And Method For Manufacturing The Same App 20190259937 - ICHIKAWA; Shinto ; et al.	2019-08-22
Underlayer For Perpendicularly Magnetized Film, Perpendicularly Magnetized Film Structure, Perpendicular Mtj Element, And Perpen App 20190172486 - SUKEGAWA; Hiroaki ; et al.	2019-06-06
Magnetoresistive element and magnetic memory device Grant 10,305,027 - Kato , et al.	2019-05-28
Monocrystalline magneto resistance element, method for producing the same and method for using same Grant 10,205,091 - Chen , et al. Feb	2019-02-12
Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same Grant 10,199,063 - Sukegawa , et al. Fe	2019-02-05
Monocrystalline Magneto Resistance Element, Method For Producing The Same And Method For Using Same App 20180226573 - CHEN; Jiamin ; et al.	2018-08-09
Magnetoresistive Element And Magnetic Memory Device App 20180090671 - KATO; Yushi ; et al.	2018-03-29
Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium Grant 9,842,636 - Sukegawa , et al. December 12, 2	2017-12-12
Perpendicular Magnetic Layer And Magnetic Device Including The Same App 20170330668 - TAKAHASHI; Shigeki ; et al.	2017-11-16
Monocrystalline Magneto Resistance Element, Method For Producing The Same And Method For Using Same App 20170229643 - CHEN; Jiamin ; et al.	2017-08-10
Underlayer For Perpendicularly Magnetized Film, Perpendicularly Magnetized Film Structure, Perpendicular Mtj Element, And Perpendicular Magnetic Recording Medium Using The Same App 20170140784 - SUKEGAWA; Hiroaki ; et al.	2017-05-18
Perpendicular Magnetization Film, Perpendicular Magnetization Film Structure, Magnetoresistance Element, And Perpendicular Magnetic Recording Medium App 20160314825 - SUKEGAWA; Hiroaki ; et al.	2016-10-27
Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same Grant 8,872,291 - Sukegawa , et al. October 28, 2	2014-10-28
Ferromagnetic tunnel junction structure and magnetoresistive element using the same Grant 8,866,243 - Inomata , et al. October 21, 2	2014-10-21
Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same Grant 8,575,674 - Sukegawa , et al. November 5, 2	2013-11-05
Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect Device and Spintronics Device Utilizing Same App 20130221461 - Sukegawa; Hiroaki ; et al.	2013-08-29
Ferromagnetic Tunnel Junction Structure And Magnetoresistive Element Using The Same App 20120112299 - Inomata; Koichiro ; et al.	2012-05-10
Ferromagnetic Tunnel Junction Structure, And Magneto-resistive Element And Spintronics Device Each Using Same App 20120091548 - Sukegawa; Hiroaki ; et al.	2012-04-19

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