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Patent applications and USPTO patent grants for Sugiura; June.The latest application filed is for "semiconductor memory device with additional conductive line to prevent line breakage".
Patent | Date |
---|---|
Semiconductor memory device with additional conductive line to prevent line breakage Grant 5,416,347 - Katto , et al. May 16, 1 | 1995-05-16 |
Method of making semiconductor device with memory cells and peripheral transistors Grant 5,352,620 - Komori , et al. * October 4, 1 | 1994-10-04 |
Semiconductor device of an LDD structure having a floating gate Grant 5,194,924 - Komori , et al. * March 16, 1 | 1993-03-16 |
Semiconductor memory Grant 4,984,212 - Fukuda , et al. January 8, 1 | 1991-01-08 |
Semiconductor memory Grant 4,905,195 - Fukuda , et al. February 27, 1 | 1990-02-27 |
Semiconductor device equipped with a field effect transistor having a floating gate Grant 4,872,041 - Sugiura , et al. October 3, 1 | 1989-10-03 |
Method of making a semiconductor memory device Grant 4,830,977 - Katto , et al. May 16, 1 | 1989-05-16 |
Semiconductor memory Grant 4,788,665 - Fukuda , et al. November 29, 1 | 1988-11-29 |
Semiconductor memory device with means to prevent word line breakage Grant 4,731,642 - Katto , et al. March 15, 1 | 1988-03-15 |
Semiconductor memory Grant 4,691,298 - Fukuda , et al. September 1, 1 | 1987-09-01 |
Semiconductor device of an LDD structure having a floating gate Grant 4,663,645 - Komori , et al. May 5, 1 | 1987-05-05 |
Forming memory transistors with varying gate oxide thicknesses Grant 4,651,406 - Shimizu , et al. March 24, 1 | 1987-03-24 |
Semiconductor integrated circuit device with memory MISFETS and thin and thick gate insulator MISFETS Grant 4,471,373 - Shimizu , et al. September 11, 1 | 1984-09-11 |
Semiconductor memory device Grant 4,451,904 - Sugiura , et al. May 29, 1 | 1984-05-29 |
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