SUDARSHAN; TANGALI S.

Patent Applications and Registrations

Patent applications and USPTO patent grants for SUDARSHAN; TANGALI S..The latest application filed is for "elimination of basal plane dislocation and pinning the conversion point below the epilayer interface for sic power device applic".

Company Profile

2.15.15

SUDARSHAN; TANGALI S. - COLUMBIA SC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Elimination of Basal Plane Dislocation and Pinning the Conversion Point Below the Epilayer Interface for SiC Power Device Applic App 20200056302 - BALACHANDRAN; ANUSHA ; et al.	2020-02-20
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition Grant 10,260,166 - Sudarshan , et al.	2019-04-16
Optically switched graphene/4H-SiC junction bipolar transistor Grant 9,966,491 - Chandrashekhar , et al. May 8, 2	2018-05-08
Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition App 20180044816 - Sudarshan; Tangali S. ; et al.	2018-02-15
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition Grant 9,885,124 - Sudarshan , et al. February 6, 2	2018-02-06
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime Grant 9,842,898 - Sudarshan , et al. December 12, 2	2017-12-12
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films Grant 9,644,288 - Sudarshan , et al. May 9, 2	2017-05-09
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films Grant 9,644,287 - Sudarshan , et al. May 9, 2	2017-05-09
Diffused junction termination structures for silicon carbide devices Grant 9,570,560 - Zhang , et al. February 14, 2	2017-02-14
OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR App 20160315211 - Chandrashekhar; MVS ; et al.	2016-10-27
Defect Engineered High Quality Multilayer Epitaxial Graphene Growth With Thickness Controllability App 20150368827 - Sudarshan; Tangali S. ; et al.	2015-12-24
Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films App 20150129897 - Sudarshan; Tangali S. ; et al.	2015-05-14
Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films App 20150128850 - Sudarshan; Tangali S. ; et al.	2015-05-14
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films Grant 8,900,979 - Sudarshan , et al. December 2, 2	2014-12-02
Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition App 20140338588 - Sudarshan; Tangali S. ; et al.	2014-11-20
Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate to Increase and Control Carrier Lifetime App 20140231826 - Sudarshan; Tangali S. ; et al.	2014-08-21
Diffused Junction Termination Structures for Silicon Carbide Devices App 20140097450 - Zhang; Qingchun ; et al.	2014-04-10
Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same Grant 8,637,386 - Zhang , et al. January 28, 2	2014-01-28
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime Grant 8,574,528 - Sudarshan , et al. November 5, 2	2013-11-05
Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial App 20130143396 - Sudarshan; Tangali S. ; et al.	2013-06-06
Methods Of Growing A Silicon Carbide Epitaxial Layer On A Substrate To Increase And Control Carrier Lifetime App 20110059003 - Sudarshan; Tangali S. ; et al.	2011-03-10
Diffused Junction Termination Structures For Silicon Carbide Devices And Methods Of Fabricating Silicon Carbide Devices Incorporating Same App 20100289032 - Zhang; Qingchun ; et al.	2010-11-18
Silicon Carbide and Related Wide Bandgap Semiconductor Based Optically-Controlled Power Switching Devices App 20100276699 - Zhao; Feng ; et al.	2010-11-04
System and method for detecting defects in semiconductor wafers Grant 7,220,978 - Ma , et al. May 22, 2	2007-05-22
System and method for fabricating diodes Grant 7,061,021 - Sudarshan , et al. June 13, 2	2006-06-13
System and method for detecting defects in semiconductor wafers App 20040206891 - Ma, Xianyun ; et al.	2004-10-21

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