Su; Shih-Tzung

Patent Applications and Registrations

Patent applications and USPTO patent grants for Su; Shih-Tzung.The latest application filed is for "mosfet with distributed doped p-shield zones under trenches".

Company Profile

1.13.14

Su; Shih-Tzung - Taipei TW
Su; Shih-Tzung - Shulin City TW
Su; Shih-Tzung - Shulin TW
Su; Shih-Tzung - Shulin City Taipei Country TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Split gate power device and its method of fabrication Grant 11,289,596 - Zeng , et al. March 29, 2	2022-03-29
Mosfet With Distributed Doped P-shield Zones Under Trenches App 20220052170 - Zeng; Jun ; et al.	2022-02-17
Split Gate Power Device And Its Method Of Fabrication App 20200273987 - Zeng; Jun ; et al.	2020-08-27
Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands Grant 10,157,983 - Zeng , et al. Dec	2018-12-18
Vertical Power Mos-gated Device With High Dopant Concentration N-well Below P-well And With Floating P-islands App 20180261666 - Zeng; Jun ; et al.	2018-09-13
Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage Grant 9,947,779 - Zeng , et al. April 17, 2	2018-04-17
Power Mosfet Having Planar Channel, Vertical Current Path, And Top Drain Electrode App 20170330962 - Zeng; Jun ; et al.	2017-11-16
Power MOSFET having planar channel, vertical current path, and top drain electrode Grant 9,761,702 - Zeng , et al. September 12, 2	2017-09-12
Power Mosfet Having Planar Channel, Vertical Current Path, And Top Drain Electrode App 20160359029 - Zeng; Jun ; et al.	2016-12-08
Vertical power MOSFET having planar channel and its method of fabrication Grant 9,461,127 - Zeng , et al. October 4, 2	2016-10-04
Vertical Power Mosfet Having Planar Channel And Its Method Of Fabrication App 20160027880 - Zeng; Jun ; et al.	2016-01-28
Vertical power MOSFET having planar channel and its method of fabrication Grant 9,184,248 - Zeng , et al. November 10, 2	2015-11-10
Vertical Power Mosfet Having Planar Channel And Its Method Of Fabrication App 20150221731 - Zeng; Jun ; et al.	2015-08-06
Vertical Power Mosfet Including Planar Channel And Vertical Field App 20150221765 - Zeng; Jun ; et al.	2015-08-06
Vertical power MOSFET with planar channel and vertical field plate Grant 9,093,522 - Zeng , et al. July 28, 2	2015-07-28
Power MOSFET with embedded recessed field plate and methods of fabrication Grant 8,581,341 - Darwish , et al. November 12, 2	2013-11-12
Edge termination with improved breakdown voltage Grant 8,294,235 - Zeng , et al. October 23, 2	2012-10-23
Edge Termination With Improved Breakdown Voltage App 20120187473 - Zeng; Jun ; et al.	2012-07-26
Power MOSFET With Embedded Recessed Field Plate and Methods of Fabrication App 20110254088 - Darwish; Mohamed N. ; et al.	2011-10-20
Edge termination with improved breakdown voltage Grant 7,923,804 - Zeng , et al. April 12, 2	2011-04-12
Trench MOSFET and method of manufacture utilizing two masks Grant 7,799,642 - Su , et al. September 21, 2	2010-09-21
Trench MOSFET and method of manufacture utilizing four masks Grant 7,687,352 - Su , et al. March 30, 2	2010-03-30
Edge Termination with Improved Breakdown Voltage App 20090206913 - Zeng; Jun ; et al.	2009-08-20
Trench Mosfet And Method Of Manufacture Utilizing Three Masks App 20090085099 - Su; Shih Tzung ; et al.	2009-04-02
Trench Mosfet And Method Of Manufacture Utilizing Four Masks App 20090085074 - Su; Shih Tzung ; et al.	2009-04-02
Trench Mosfet And Method Of Manufacture Utilizing Two Masks App 20090085105 - Su; Shih Tzung ; et al.	2009-04-02

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