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Patent applications and USPTO patent grants for Streetman; Ben G..The latest application filed is for "modulation doped field effect transistor having built-in drift field".
Patent | Date |
---|---|
Modulation doped field effect transistor having built-in drift field Grant 5,436,474 - Banerjee , et al. July 25, 1 | 1995-07-25 |
Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction Grant 5,034,604 - Streetman , et al. July 23, 1 | 1991-07-23 |
Negative resistance heterojunction devices Grant 4,257,055 - Hess , et al. March 17, 1 | 1981-03-17 |
SEC | 0001186531 | STREETMAN BEN G |
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