| Patent | Date |
|---|
Dual width finned semiconductor structure
Grant 11,189,532 - Song , et al. November 30, 2 | 2021-11-30 |
Semiconductor fins with dielectric isolation at fin bottom
Grant 11,043,429 - Xu , et al. June 22, 2 | 2021-06-22 |
Controlling active fin height of FinFET device
Grant 10,892,193 - Song , et al. January 12, 2 | 2021-01-12 |
Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal
Grant 10,770,361 - Song , et al. Sep | 2020-09-08 |
Dual Width Finned Semiconductor Structure
App 20200194314 - Song; Yi ; et al. | 2020-06-18 |
Controlling Active Fin Height Of Finfet Device Using Etch Protection Layer To Prevent Recess Of Isolation Layer During Gate Oxid
App 20200176332 - Song; Yi ; et al. | 2020-06-04 |
Dual width finned semiconductor structure
Grant 10,672,668 - Song , et al. | 2020-06-02 |
Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal
Grant 10,665,514 - Song , et al. | 2020-05-26 |
Semiconductor Fins With Dielectric Isolation At Fin Bottom
App 20200152520 - Xu; Peng ; et al. | 2020-05-14 |
Semiconductor fins with dielectric isolation at fin bottom
Grant 10,636,709 - Xu , et al. | 2020-04-28 |
Protection of low temperature isolation fill
Grant 10,586,700 - Belyansky , et al. | 2020-03-10 |
Controlling Active Fin Height Of Finfet Device Using Etch Protection Layer To Prevent Recess Of Isolation Layer During Gate Oxid
App 20200027796 - Song; Yi ; et al. | 2020-01-23 |
Protection of low temperature isolation fill
Grant 10,535,550 - Belyansky , et al. Ja | 2020-01-14 |
Controlling Active Fin Height Of Finfet Device Using Etch Protection Layer To Prevent Recess Of Isolation Layer During Gate Oxid
App 20190385916 - Song; Yi ; et al. | 2019-12-19 |
Dual Width Finned Semiconductor Structure
App 20190371678 - Song; Yi ; et al. | 2019-12-05 |
Semiconductor Fins With Dielectric Isolation At Fin Bottom
App 20190311955 - Xu; Peng ; et al. | 2019-10-10 |
Protection Of Low Temperature Isolation Fill
App 20190067078 - Belyansky; Michael P. ; et al. | 2019-02-28 |
Protection Of Low Temperature Isolation Fill
App 20190067079 - Belyansky; Michael P. ; et al. | 2019-02-28 |
Uniform dielectric recess depth during fin reveal
Grant 9,984,935 - Briggs , et al. May 29, 2 | 2018-05-29 |
Uniform dielectric recess depth during fin reveal
Grant 9,984,916 - Briggs , et al. May 29, 2 | 2018-05-29 |
Uniform dielectric recess depth during fin reveal
Grant 9,941,134 - Briggs , et al. April 10, 2 | 2018-04-10 |
Uniform Dielectric Recess Depth During Fin Reveal
App 20170236717 - Briggs; Benjamin D. ; et al. | 2017-08-17 |
Uniform Dielectric Recess Depth During Fin Reveal
App 20170236756 - Briggs; Benjamin D. ; et al. | 2017-08-17 |
Uniform dielectric recess depth during fin reveal
Grant 9,666,474 - Briggs , et al. May 30, 2 | 2017-05-30 |
Uniform Dielectric Recess Depth During Fin Reveal
App 20170125286 - Briggs; Benjamin D. ; et al. | 2017-05-04 |
Uniform Dielectric Recess Depth During Fin Reveal
App 20170125302 - Briggs; Benjamin D. ; et al. | 2017-05-04 |
Semiconductor structures having improved contact resistance
Grant 8,685,809 - Doris , et al. April 1, 2 | 2014-04-01 |
Replacement gate MOSFET with self-aligned diffusion contact
Grant 8,421,077 - Jain , et al. April 16, 2 | 2013-04-16 |
Semiconductor structures having improved contact resistance
Grant 8,299,455 - Doris , et al. October 30, 2 | 2012-10-30 |
Semiconductor Structures Having Improved Contact Resistance
App 20120208332 - Doris; Bruce B. ; et al. | 2012-08-16 |
Semiconductor Structures Having Improved Contact Resistance
App 20120132966 - Doris; Bruce B. ; et al. | 2012-05-31 |
Pedestal guard ring having continuous M1 metal barrier connected to crack stop
Grant 8,188,574 - Angyal , et al. May 29, 2 | 2012-05-29 |
Method and process for forming a self-aligned silicide contact
Grant 8,101,518 - Cabral, Jr. , et al. January 24, 2 | 2012-01-24 |
Replacement Gate Mosfet With Self-aligned Diffusion Contact
App 20110298017 - Jain; Sameer H. ; et al. | 2011-12-08 |
Method for forming self-aligned metal silicide contacts
Grant 8,039,382 - Fang , et al. October 18, 2 | 2011-10-18 |
Methods for forming high performance gates and structures thereof
Grant 7,790,553 - Zhu , et al. September 7, 2 | 2010-09-07 |
Pedestal Guard Ring Having Continuous M1 Metal Barrier Connected To Crack Stop
App 20100200958 - Angyal; Matthew S. ; et al. | 2010-08-12 |
Methods For Forming High Performance Gates And Structures Thereof
App 20100006926 - ZHU; HUILONG ; et al. | 2010-01-14 |
Method For Forming Self-aligned Metal Silicide Contacts
App 20090309228 - Fang; Sunfei ; et al. | 2009-12-17 |
Method for forming self-aligned metal silicide contacts
Grant 7,618,891 - Fang , et al. November 17, 2 | 2009-11-17 |
Method and process for forming a self-aligned silicide contact
Grant 7,544,610 - Cabral, Jr. , et al. June 9, 2 | 2009-06-09 |
Method And Process For Forming A Self-aligned Silicide Contact
App 20080274611 - Cabral; Cyril ; et al. | 2008-11-06 |
STRUCTURE AND METHOD OF MANUFACTURING A STRAINED FinFET WITH STRESSED SILICIDE
App 20080173942 - Zhu; Huilong ; et al. | 2008-07-24 |
Method for forming self-aligned metal silicide contacts
App 20070254479 - Fang; Sunfei ; et al. | 2007-11-01 |
Improved Thermal Budget Using Nickel Based Silicides For Enhanced Semiconductor Device Performance
App 20070249149 - Deshpande; Sadanand V. ; et al. | 2007-10-25 |
Air gap interconnect structure and method of manufacture
Grant 7,041,571 - Strane May 9, 2 | 2006-05-09 |
Trench formation in semiconductor integrated circuits (ICs)
Grant 6,989,317 - Radens , et al. January 24, 2 | 2006-01-24 |
Low Cu percentages for reducing shorts in AlCu lines
Grant 6,960,306 - Iggulden , et al. November 1, 2 | 2005-11-01 |
Air Gap Interconnect Structure And Method Of Manufacture
App 20050191862 - Strane, Jay W. | 2005-09-01 |
Silicide Resistor In Beol Layer Of Semiconductor Device And Method
App 20050130383 - Divakaruni, Ramachandra ; et al. | 2005-06-16 |
Etching openings of different depths using a single mask layer method and structure
Grant 6,887,785 - Dobuzinsky , et al. May 3, 2 | 2005-05-03 |
Self-aligned borderless contacts
Grant 6,809,027 - Strane , et al. October 26, 2 | 2004-10-26 |
Method of making self-aligned borderless contacts
Grant 6,806,177 - Strane , et al. October 19, 2 | 2004-10-19 |
Self-aligned borderless contacts
App 20040104409 - Strane, Jay W. ; et al. | 2004-06-03 |
Low Cu percentages for reducing shorts in AlCu lines
App 20040020891 - Iggulden, Roy C. ; et al. | 2004-02-05 |
Self-aligned borderless contacts
App 20030228752 - Strane, Jay W. ; et al. | 2003-12-11 |
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