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Patent applications and USPTO patent grants for Storasta; Liutauras.The latest application filed is for "junction barrier schottky diode with enhanced surge current capability".
Patent | Date |
---|---|
Junction barrier schottky diode with enhanced surge current capability Grant 10,164,126 - Mihaila , et al. Dec | 2018-12-25 |
Reverse-conducting semiconductor device Grant 10,109,725 - Storasta , et al. October 23, 2 | 2018-10-23 |
Junction Barrier Schottky Diode With Enhanced Surge Current Capability App 20180212071 - Mihaila; Andrei ;   et al. | 2018-07-26 |
Reverse-conducting Semiconductor Device App 20170294526 - Storasta; Liutauras ;   et al. | 2017-10-12 |
Reverse-conducting semiconductor device Grant 9,553,086 - Storasta , et al. January 24, 2 | 2017-01-24 |
Reverse-conducting Semiconductor Device App 20160307888 - Storasta; Liutauras ;   et al. | 2016-10-20 |
Power semiconductor device Grant 9,324,708 - Storasta , et al. April 26, 2 | 2016-04-26 |
Method for improving the quality of a SiC crystal Grant 8,815,708 - Tsuchida , et al. August 26, 2 | 2014-08-26 |
Power Semiconductor Device App 20130099279 - Storasta; Liutauras ;   et al. | 2013-04-25 |
Reverse-conducting semiconductor device Grant 8,212,283 - Storasta , et al. July 3, 2 | 2012-07-03 |
SiC crystal semiconductor device Grant 7,834,362 - Tsuchida , et al. November 16, 2 | 2010-11-16 |
Reverse-conducting Semiconductor Device App 20100276727 - STORASTA; Liutauras ;   et al. | 2010-11-04 |
Method for improving the quality of a SiC crystal Grant 7,754,589 - Tsuchida , et al. July 13, 2 | 2010-07-13 |
Method for Improving the Quality of a SiC Crystal App 20100173475 - Tsuchida; Hidekazu ;   et al. | 2010-07-08 |
Method for improving the quality of an SiC crystal and an SiC semiconductor device Grant 7,737,011 - Tsuchida , et al. June 15, 2 | 2010-06-15 |
Method for Improving the Quality of a SiC Crystal App 20090047772 - Tsuchida; Hidekazu ;   et al. | 2009-02-19 |
SiC Crystal Semiconductor Device App 20090039358 - Tsuchida; Hidekazu ;   et al. | 2009-02-12 |
Method for improving the quality of an SiC crystal and an SiC semiconductor device App 20080026544 - Tsuchida; Hidekazu ;   et al. | 2008-01-31 |
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