| Patent | Date |
|---|
Semiconductor light emitting device with lateral current injection in the light emitting region
Grant 8,026,117 - Kim , et al. September 27, 2 | 2011-09-27 |
Light emitting devices with compact active regions
Grant 7,719,018 - Misra , et al. May 18, 2 | 2010-05-18 |
Semiconductor Light Emitting Device With Lateral Current Injection In The Light Emitting Region
App 20090191658 - KIM; James C. ; et al. | 2009-07-30 |
Semiconductor light emitting device with lateral current injection in the light emitting region
Grant 7,535,031 - Kim , et al. May 19, 2 | 2009-05-19 |
Light emitting diodes with graded composition active regions
Grant 7,345,324 - Bour , et al. March 18, 2 | 2008-03-18 |
Semiconductor light emitting device with lateral current injection in the light emitting region
App 20070057249 - Kim; James C. ; et al. | 2007-03-15 |
III-nitride light emitting device with reduced polarization fields
Grant 7,115,908 - Watanabe , et al. October 3, 2 | 2006-10-03 |
lll-phosphide light emitting devices with thin active layers
Grant 7,087,941 - Gardner , et al. August 8, 2 | 2006-08-08 |
Light emitting diodes with graded composition active regions
App 20050263780 - Bour, David P. ; et al. | 2005-12-01 |
Semiconductor light emitting device including photonic band gap material and luminescent material
Grant 6,956,247 - Stockman October 18, 2 | 2005-10-18 |
Light emitting diodes with graded composition active regions
Grant 6,955,933 - Bour , et al. October 18, 2 | 2005-10-18 |
Light emitting devices with compact active regions
App 20050212005 - Misra, Mira S. ; et al. | 2005-09-29 |
III-Phosphide and III-Arsenide flip chip light-emitting devices
Grant 6,946,309 - Camras , et al. September 20, 2 | 2005-09-20 |
III-nitride light-emitting devices with improved high-current efficiency
Grant 6,943,381 - Gardner , et al. September 13, 2 | 2005-09-13 |
III-nitride light emitting device with reduced polarization fields
App 20050169333 - Watanabe, Satoshi ; et al. | 2005-08-04 |
Iii-nitride Light-emitting Devices With Improved High-current Efficiency
App 20050167690 - Gardner, Nathan F. ; et al. | 2005-08-04 |
Light emitting devices with compact active regions
Grant 6,900,474 - Misra , et al. May 31, 2 | 2005-05-31 |
III-nitride light emitting device with p-type active layer
Grant 6,835,957 - Stockman December 28, 2 | 2004-12-28 |
III-Phosphide and III-Arsenide flip chip light-emitting devices
App 20040227148 - Camras, Michael D. ; et al. | 2004-11-18 |
Minority carrier semiconductor devices with improved reliability
Grant 6,794,731 - Stockman , et al. September 21, 2 | 2004-09-21 |
III-Phospide and III-Arsenide flip chip light-emitting devices
Grant 6,784,463 - Camras , et al. August 31, 2 | 2004-08-31 |
Light emitting devices with compact active regions
App 20040119077 - Misra, Mira S. ; et al. | 2004-06-24 |
III-nitride light emitting device with p-type active layer
App 20040021143 - Stockman, Stephen A. | 2004-02-05 |
Indium gallium nitride smoothing structures for III-nitride devices
Grant 6,635,904 - Goetz , et al. October 21, 2 | 2003-10-21 |
III-Nitride light emitting devices with low driving voltage
Grant 6,630,692 - Goetz , et al. October 7, 2 | 2003-10-07 |
Forming semiconductor structures including activated acceptors in buried p-type III-V layers
Grant 6,537,838 - Stockman March 25, 2 | 2003-03-25 |
Light emitting diodes with graded composition active regions
App 20030020085 - Bour, David P. ; et al. | 2003-01-30 |
Chirped multi-well active region LED
Grant 6,504,171 - Grillot , et al. January 7, 2 | 2003-01-07 |
III-Nitride light emitting devices with low driving voltage
App 20020190259 - Goetz, Werner ; et al. | 2002-12-19 |
Forming Semiconductor Structures Including Acticated Acceptors In Buried P-type Gan Layers
App 20020187568 - Stockman, Stephen A. | 2002-12-12 |
Indium gallium nitride smoothing structures for III-nitride devices
Grant 6,489,636 - Goetz , et al. December 3, 2 | 2002-12-03 |
Indium Gallium Nitride Smoothing Structures For Iii-nitride Devices
App 20020171091 - Goetz, Werner K. ; et al. | 2002-11-21 |
Indium gallium nitride smoothing structures for III-nitride devices
App 20020171092 - Goetz, Werner K. ; et al. | 2002-11-21 |
Forming low resistivity p-type gallium nitride
App 20020157596 - Stockman, Stephen A. ; et al. | 2002-10-31 |
AIGaInP light emitting devices with thin active layers
App 20020127751 - Gardner, Nathan F. ; et al. | 2002-09-12 |
III-Phosphide and III-Arsenide flip chip light-emitting devices
App 20020093023 - Camras, Michael D. ; et al. | 2002-07-18 |
Minority Carrier Semiconductor Devices With Improved Reliabilty
App 20020003237 - STOCKMAN, STEPHEN A. ; et al. | 2002-01-10 |
Algainp Light Emitting Devices With Thin Active Layers
App 20010020703 - GARDNER, NATHAN F. ; et al. | 2001-09-13 |
Transparent substrate light emitting diodes with directed light output
Grant 6,015,719 - Kish, Jr. , et al. January 18, 2 | 2000-01-18 |
Transparent substrate light emitting diodes with directed light output
Grant 5,793,062 - Kish, Jr. , et al. August 11, 1 | 1998-08-11 |
Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices
Grant 5,656,538 - Gardner , et al. August 12, 1 | 1997-08-12 |
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