Stevens; Keith C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Stevens; Keith C..The latest application filed is for "signal monitoring of through-wafer vias using a multi-layer inductor".

Company Profile

0.8.6

Stevens; Keith C. - Fairfield VT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Signal monitoring of through-wafer vias using a multi-layer inductor Grant 9,658,255 - DiRocco , et al. May 23, 2	2017-05-23
Signal monitoring of through-wafer vias using a multi-layer inductor Grant 9,372,208 - DiRocco , et al. June 21, 2	2016-06-21
Low-voltage IC test for defect screening Grant 9,285,417 - Poindexter , et al. March 15, 2	2016-03-15
Signal Monitoring Of Through-wafer Vias Using A Multi-layer Inductor App 20150362534 - DiRocco; Mark A. ; et al.	2015-12-17
Methodologies and test configurations for testing thermal interface materials Grant 9,116,200 - Fregeau , et al. August 25, 2	2015-08-25
Signal Monitoring Of Through-wafer Vias Using A Multi-layer Inductor App 20150185273 - DiRocco; Mark A. ; et al.	2015-07-02
Low-voltage Ic Test For Defect Screening App 20140184262 - Poindexter; Daniel J. ; et al.	2014-07-03
Methodologies And Test Configurations For Testing Thermal Interface Materials App 20130229198 - FREGEAU; Dustin ; et al.	2013-09-05
Methodologies and test configurations for testing thermal interface materials Grant 8,471,575 - Fregeau , et al. June 25, 2	2013-06-25
Methodologies and Test Configurations for Testing Thermal Interface Materials App 20110267082 - FREGEAU; Dustin ; et al.	2011-11-03
Light controlled silicon on insulator device Grant 6,545,333 - Ketchen , et al. April 8, 2	2003-04-08
Method for monitoring defects in polysilicon gates in semiconductor devices responsive to illumination by incident light Grant 6,529,018 - Stevens March 4, 2	2003-03-04
Deposition Of Conductive Material Over A Semiconductor Structure That Contains Soi Devices To Reduce To Reduce Charge Buid-up In The Soi Devices During Subsequent Focused Ion Beam Processing Steps App 20020155645 - Stevens, Keith C.	2002-10-24

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