| Patent | Date |
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Methods of reducing material loss in isolation structures by introducing inert atoms into oxide hard mask layer used in growing channel semiconductor material
Grant 8,871,586 - Scheiper , et al. October 28, 2 | 2014-10-28 |
Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill
Grant 8,846,513 - Baars , et al. September 30, 2 | 2014-09-30 |
Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials
Grant 8,796,807 - Stephan , et al. August 5, 2 | 2014-08-05 |
High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology
Grant 8,735,236 - Hempel , et al. May 27, 2 | 2014-05-27 |
Methods Of Reducing Material Loss In Isolation Structures By Introducing Inert Atoms Into Oxide Hard Mask Layer Used In Growing Channel Semiconductor Material
App 20140113419 - Scheiper; Thilo ; et al. | 2014-04-24 |
High-K Metal Gate Electrode Structure Formed by Removing a Work Function on Sidewalls in Replacement Gate Technology
App 20130168773 - Hempel; Klaus ; et al. | 2013-07-04 |
Prevention of ILD Loss in Replacement Gate Technologies by Surface Treatmen
App 20130115773 - Pal; Rohit ; et al. | 2013-05-09 |
Semiconductor Device Comprising Replacement Gate Electrode Structures and Self-Aligned Contact Elements Formed by a Late Contact Fill
App 20130075821 - Baars; Peter ; et al. | 2013-03-28 |
Semiconductor device comprising a metal gate stack of reduced height and method of forming the same
Grant 8,293,610 - Beyer , et al. October 23, 2 | 2012-10-23 |
Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process
Grant 8,288,256 - Feudel , et al. October 16, 2 | 2012-10-16 |
In situ monitoring of metal contamination during microstructure processing
Grant 8,158,065 - Trentzsch , et al. April 17, 2 | 2012-04-17 |
Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment
Grant 8,119,461 - Trentzsch , et al. February 21, 2 | 2012-02-21 |
Temperature Monitoring In A Semiconductor Device By Using A Pn Junction Based On Silicon/germanium Materials
App 20120025276 - Stephan; Rolf ; et al. | 2012-02-02 |
Method of forming a semiconductor structure comprising a formation of at least one sidewall spacer structure
Grant 8,003,460 - Wirbeleit , et al. August 23, 2 | 2011-08-23 |
Reducing The Creation Of Charge Traps At Gate Dielectrics In Mos Transistors By Performing A Hydrogen Treatment
App 20110045665 - Trentzsch; Martin ; et al. | 2011-02-24 |
Method Of Forming A Semiconductor Structure
App 20100203698 - Wirbeleit; Frank ; et al. | 2010-08-12 |
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques
Grant 7,745,334 - Press , et al. June 29, 2 | 2010-06-29 |
Method of forming a semiconductor structure
Grant 7,727,827 - Wirbeleit , et al. June 1, 2 | 2010-06-01 |
In Situ Monitoring Of Metal Contamination During Microstructure Processing
App 20100077839 - Trentzsch; Martin ; et al. | 2010-04-01 |
Field effect transistor and method of forming a field effect transistor
Grant 7,629,211 - Beyer , et al. December 8, 2 | 2009-12-08 |
Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device
Grant 7,625,802 - Feudel , et al. December 1, 2 | 2009-12-01 |
Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same
Grant 7,608,499 - Romero , et al. October 27, 2 | 2009-10-27 |
Field effect transistors and methods for fabricating the same
Grant 7,605,045 - Peidous , et al. October 20, 2 | 2009-10-20 |
Temperature Monitoring In A Semiconductor Device By Using An Pn Junction Based On Silicon/germanium Material
App 20090218601 - Stephan; Rolf ; et al. | 2009-09-03 |
Semiconductor Device Comprising A Metal Gate Stack Of Reduced Height And Method Of Forming The Same
App 20090218639 - Beyer; Sven ; et al. | 2009-09-03 |
Field effect transistor having a stressed dielectric layer based on an enhanced device topography
Grant 7,563,731 - Schwan , et al. July 21, 2 | 2009-07-21 |
Reducing The Creation Of Charge Traps At Gate Dielectrics In Mos Transistors By Performing A Hydrogen Treatment
App 20090170339 - Trentzsch; Martin ; et al. | 2009-07-02 |
Method Of Forming A Semiconductor Structure Comprising A Formation Of At Least One Sidewall Spacer Structure
App 20090004799 - Wirbeleit; Frank ; et al. | 2009-01-01 |
Enhancing Transistor Characteristics By A Late Deep Implantation In Combination With A Diffusion-free Anneal Process
App 20080268625 - Feudel; Thomas ; et al. | 2008-10-30 |
Method Of Forming A Semiconductor Structure
App 20080242040 - Wirbeleit; Frank ; et al. | 2008-10-02 |
Technique For Locally Adapting Transistor Characteristics By Using Advanced Laser/flash Anneal Techniques
App 20080081471 - Press; Patrick ; et al. | 2008-04-03 |
Field Effect Transistor Having A Stressed Dielectric Layer Based On An Enhanced Device Topography
App 20080081486 - Schwan; Christoph ; et al. | 2008-04-03 |
Semiconductor Structure Comprising Field Effect Transistors With Stressed Channel Regions And Method Of Forming The Same
App 20080023771 - Romero; Karla ; et al. | 2008-01-31 |
Field Effect Transistor And Method Of Forming A Field Effect Transistor
App 20080026531 - Beyer; Sven ; et al. | 2008-01-31 |
Method and system for increasing product yield by controlling lithography on the basis of electrical speed data
Grant 7,325,224 - Seltmann , et al. January 29, 2 | 2008-01-29 |
Field Effect Transistors And Methods For Fabricating The Same
App 20080014704 - Peidous; Igor ; et al. | 2008-01-17 |
Semiconductor device having a retrograde dopant profile in a channel region
Grant 7,297,994 - Wieczorek , et al. November 20, 2 | 2007-11-20 |
Method Of Forming A Semiconductor Structure Comprising Transistor Elements With Differently Stressed Channel Regions
App 20070207583 - Burbach; Gert ; et al. | 2007-09-06 |
Formation Of Silicided Surfaces For Silicon/carbon Source/drain Regions
App 20070200176 - Kammler; Thorsten ; et al. | 2007-08-30 |
Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions
Grant 7,238,578 - Burbach , et al. July 3, 2 | 2007-07-03 |
Method of forming different silicide portions on different silicon-containing regions in a semiconductor device
Grant 7,226,859 - Wieczorek , et al. June 5, 2 | 2007-06-05 |
Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device
Grant 7,217,657 - Wieczorek , et al. May 15, 2 | 2007-05-15 |
Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device
Grant 7,148,145 - Wieczorek , et al. December 12, 2 | 2006-12-12 |
Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device
Grant 7,115,464 - Stephan , et al. October 3, 2 | 2006-10-03 |
Method of removing features using an improved removal process in the fabrication of a semiconductor device
Grant 7,041,583 - Wieczorek , et al. May 9, 2 | 2006-05-09 |
Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions
App 20060046400 - Burbach; Gert ; et al. | 2006-03-02 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device
Grant 6,924,216 - Feudel , et al. August 2, 2 | 2005-08-02 |
Semiconductor device having a retrograde dopant profile in a channel region
App 20050151202 - Wieczorek, Karsten ; et al. | 2005-07-14 |
Method and system for increasing product yield by controlling lithography on the basis of electrical speed data
App 20050120328 - Seltmann, Rolf ; et al. | 2005-06-02 |
Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same
Grant 6,881,641 - Wieczorek , et al. April 19, 2 | 2005-04-19 |
Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
Grant 6,846,708 - Feudel , et al. January 25, 2 | 2005-01-25 |
Method of assessing lateral dopant and/or charge carrier profiles
Grant 6,822,430 - Feudel , et al. November 23, 2 | 2004-11-23 |
Field effect transistor with reduced gate delay and method of fabricating the same
Grant 6,798,028 - Horstmann , et al. September 28, 2 | 2004-09-28 |
Method of assessing lateral dopant and/or charge carrier profiles
App 20040152222 - Feudel, Thomas ; et al. | 2004-08-05 |
Method of forming a semiconductor device having T-shaped gate structure
Grant 6,770,552 - Wieczorek , et al. August 3, 2 | 2004-08-03 |
Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
App 20040137687 - Feudel, Thomas ; et al. | 2004-07-15 |
Method of removing features using an improved removal process in the fabrication of a semiconductor device
App 20040121531 - Wieczorek, Karsten ; et al. | 2004-06-24 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device
App 20040087120 - Feudel, Thomas ; et al. | 2004-05-06 |
Method of removing sidewall spacers in the fabrication of a semiconductor device using an improved removal process
App 20040087155 - Wieczorek, Karsten ; et al. | 2004-05-06 |
Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device
App 20040063262 - Feudel, Thomas ; et al. | 2004-04-01 |
Method Of Forming A Semiconductor Device Having T-Shaped Gate Structure
App 20040046220 - Wieczorek, Karsten ; et al. | 2004-03-11 |
Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device
App 20040048472 - Wieczorek, Karsten ; et al. | 2004-03-11 |
Semiconductor device having increased metal silicide portions and method of forming the semiconductor
Grant 6,673,665 - Wieczorek , et al. January 6, 2 | 2004-01-06 |
Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same
App 20030183856 - Wieczorek, Karsten ; et al. | 2003-10-02 |
Method of forming metal silicide regions on a gate electrode and on the source/drain regions of a semiconductor device
Grant 6,620,718 - Wieczorek , et al. September 16, 2 | 2003-09-16 |
Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device
App 20030164524 - Stephan, Rolf ; et al. | 2003-09-04 |
Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device
App 20030160198 - Wieczorek, Karsten ; et al. | 2003-08-28 |
Method of forming different silicide portions on different silicon- containing regions in a semiconductor device
App 20030162389 - Wieczorek, Karsten ; et al. | 2003-08-28 |
Semiconductor device having increased metal silicide portions and method of forming the semiconductor
App 20030162349 - Wieczorek, Karsten ; et al. | 2003-08-28 |
Method of forming low resistance metal silicide region on a gate electrode of a transistor
Grant 6,423,634 - Wieczorek , et al. July 23, 2 | 2002-07-23 |
Field effect transistor with an improved gate contact and method of fabricating the same
App 20020056879 - Wieczorek, Karsten ; et al. | 2002-05-16 |
Field effect transistor with reduced gate delay and method of fabricating the same
App 20020056859 - Horstmann, Manfred ; et al. | 2002-05-16 |
Sidewall spacer based fet alignment technology
App 20020048890 - Wieczorek, Karsten ; et al. | 2002-04-25 |
Fully self-aligned fet technology
App 20020048862 - Wieczorek, Karsten ; et al. | 2002-04-25 |
Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making same
Grant 6,306,698 - Wieczorek , et al. October 23, 2 | 2001-10-23 |
Method of forming a transistor having a low-resistance gate electrode
Grant 6,268,257 - Wieczorek , et al. July 31, 2 | 2001-07-31 |
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