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Patent applications and USPTO patent grants for Stejskal; Roland.The latest application filed is for "semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach".
Patent | Date |
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Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach Grant 8,450,163 - Beyer , et al. May 28, 2 | 2013-05-28 |
Trench isolation structure having different stress Grant 8,158,486 - Van Bentum , et al. April 17, 2 | 2012-04-17 |
Semiconductor Device Comprising Metal Gates and Semiconductor Resistors Formed on the Basis of a Replacement Gate Approach App 20110266633 - Beyer; Sven ;   et al. | 2011-11-03 |
Method of patterning gate electrodes by reducing sidewall angles of a mask layer Grant 7,858,526 - Stejskal , et al. December 28, 2 | 2010-12-28 |
Method Of Patterning Gate Electrodes By Reducing Sidewall Angles Of A Mask Layer App 20080003825 - Stejskal; Roland ;   et al. | 2008-01-03 |
Trench Isolation Structure Having Different Stress App 20070155122 - Van Bentum; Ralf ;   et al. | 2007-07-05 |
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