Srivathanakul; Songkram

Patent Applications and Registrations

Patent applications and USPTO patent grants for Srivathanakul; Songkram.The latest application filed is for "methods of forming stress liners using atomic layer deposition to form gapfill seams".

Company Profile

1.11.12

Srivathanakul; Songkram - Halfmoon NY
Srivathanakul; Songkram - Waterford NY
Srivathanakul; Songkram - Saratoga Springs NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods Of Forming Stress Liners Using Atomic Layer Deposition To Form Gapfill Seams App 20200111704 - Kozarksy; Eric S. ; et al.	2020-04-09
Methods of self-forming barrier formation in metal interconnection applications Grant 9,905,460 - Chae , et al. February 27, 2	2018-02-27
Methods For Forming Mask Layers Using A Flowable Carbon-containing Silicon Dioxide Material App 20180005893 - Cao; Huy ; et al.	2018-01-04
Method, Apparatus And System For Providing Nitride Cap Layer In Replacement Metal Gate Structure App 20170338325 - Cao; Huy ; et al.	2017-11-23
Methods for forming mask layers using a flowable carbon-containing silicon dioxide material Grant 9,793,169 - Cao , et al. October 17, 2	2017-10-17
Methods Of Self-forming Barrier Formation In Metal Interconnection Applications App 20170133325 - CHAE; Moosung M. ; et al.	2017-05-11
Gate height uniformity in semiconductor devices Grant 9,349,814 - Chen , et al. May 24, 2	2016-05-24
Semiconductor device with diffusion barrier film and method of manufacturing the same Grant 9,330,982 - Cao , et al. May 3, 2	2016-05-03
Formation of carbon-rich contact liner material Grant 9,318,440 - Cao , et al. April 19, 2	2016-04-19
FinFET semiconductor devices with local isolation features and methods for fabricating the same Grant 9,245,979 - Cai , et al. January 26, 2	2016-01-26
Formation Of Carbon-rich Contact Liner Material App 20150357285 - CAO; Huy ; et al.	2015-12-10
Gate Height Uniformity In Semiconductor Devices App 20150270364 - CHEN; Tsung-Liang ; et al.	2015-09-24
Formation of carbon-rich contact liner material Grant 9,130,019 - Cao , et al. September 8, 2	2015-09-08
Gate height uniformity in semiconductor devices Grant 9,093,560 - Chen , et al. July 28, 2	2015-07-28
Formation Of Carbon-rich Contact Liner Material App 20150194342 - CAO; Huy ; et al.	2015-07-09
Gate Height Uniformity In Semiconductor Devices App 20150084131 - CHEN; Tsung-Liang ; et al.	2015-03-26
Methods for fabricating integrated circuits utilizing silicon nitride layers Grant 8,940,650 - Cao , et al. January 27, 2	2015-01-27
Reducing gate height variance during semiconductor device formation Grant 8,900,940 - Jha , et al. December 2, 2	2014-12-02
Finfet Semiconductor Devices With Local Isolation Features And Methods For Fabricating The Same App 20140346599 - Cai; Xiuyu ; et al.	2014-11-27
Methods For Fabricating Integrated Circuits Utilizing Silicon Nitride Layers App 20140256141 - Cao; Huy ; et al.	2014-09-11
Reducing Gate Height Variance During Semiconductor Device Formation App 20140193957 - Jha; Ashish K. ; et al.	2014-07-10
Spacer Divot Sealing Method And Semiconductor Device Incorporating Same App 20140175562 - Wang; Haiting ; et al.	2014-06-26
Method of forming a low-K dielectric film Grant 8,716,150 - Sun , et al. May 6, 2	2014-05-06

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