Sridevan; Srikant

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sridevan; Srikant.The latest application filed is for "hybrid semiconductor device having a gan transistor and a silicon mosfet".

Company Profile

0.19.14

Sridevan; Srikant - Redondo Beach CA US
Sridevan; Srikant - Raleigh NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for forming a superjunction device with improved ruggedness Grant 9,478,441 - Sridevan October 25, 2	2016-10-25
Hybrid semiconductor device having a GaN transistor and a silicon MOSFET Grant 8,368,120 - Lidow , et al. February 5, 2	2013-02-05
Hybrid Semiconductor Device Having a GaN Transistor and a Silicon MOSFET App 20120043553 - Lidow; Alexander ; et al.	2012-02-23
Hybrid semiconductor device Grant 8,017,978 - Lidow , et al. September 13, 2	2011-09-13
High voltage vertical conduction superjunction semiconductor device Grant RE41,509 - Kinzer , et al. August 17, 2	2010-08-17
Superjunction device with improved ruggedness Grant 7,767,500 - Sridevan August 3, 2	2010-08-03
Termination for a superjunction device Grant 7,659,588 - Husain , et al. February 9, 2	2010-02-09
Termination for a superjunction device App 20070222025 - Husain; Ali ; et al.	2007-09-27
Hybrid semiconductor device App 20070210333 - Lidow; Alexander ; et al.	2007-09-13
Superjunction device with improved ruggedness App 20070048909 - Sridevan; Srikant	2007-03-01
Superjunction device with improved ruggedness Grant 7,166,890 - Sridevan January 23, 2	2007-01-23
High power silicon carbide and silicon semiconductor device package Grant 6,900,537 - Sridevan May 31, 2	2005-05-31
Superjunction device with improved ruggedness App 20050082570 - Sridevan, Srikant	2005-04-21
Bidirectional shallow trench superjunction device with resurf region Grant 6,835,993 - Sridevan , et al. December 28, 2	2004-12-28
Trench fill process Grant 6,812,525 - Bul , et al. November 2, 2	2004-11-02
Lateral conduction superjunction semiconductor device Grant 6,787,872 - Kinzer , et al. September 7, 2	2004-09-07
High power silicon carbide and silicon semiconductor device package App 20040130021 - Sridevan, Srikant	2004-07-08
Method of preparing polysilicon FET built on silicon carbide diode substrate Grant 6,727,128 - Sridevan April 27, 2	2004-04-27
Bidirectional shallow trench superjunction device with resurf region App 20040065934 - Sridevan, Srikant ; et al.	2004-04-08
Trench fill process App 20030234423 - Bul, Igor ; et al.	2003-12-25
High voltage vertical conduction superjunction semiconductor device Grant 6,608,350 - Kinzer , et al. August 19, 2	2003-08-19
Polysilicon fet built on silicon carbide diode substrate App 20030153118 - Sridevan, Srikant	2003-08-14
Polysilicon Fet Built On Silicon Carbide Diode Substrate App 20030052321 - Sridevan, Srikant	2003-03-20
Superjunction device with self compensated trench walls Grant 6,512,267 - Kinzer , et al. January 28, 2	2003-01-28
Angle implant process for cellular deep trench sidewall doping Grant 6,509,240 - Ren , et al. January 21, 2	2003-01-21
Lateral superjunction semiconductor device App 20020195627 - Kinzer, Daniel M. ; et al.	2002-12-26
Superjunction device with self compensated trench walls App 20020149051 - Kinzer, Daniel M. ; et al.	2002-10-17
High voltage vertical conduction superjunction semiconductor device App 20020070418 - Kinzer, Daniel M ; et al.	2002-06-13
Angle implant process for cellular deep trench sidewall doping App 20010041400 - Ren, Lipping ; et al.	2001-11-15
MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance Grant 6,194,741 - Kinzer , et al. February 27, 2	2001-02-27
Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance Grant 5,742,076 - Sridevan , et al. April 21, 1	1998-04-21

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