Spulber; Oana Julia

Patent Applications and Registrations

Patent applications and USPTO patent grants for Spulber; Oana Julia.The latest application filed is for "silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions".

Company Profile

4.6.6

Spulber; Oana Julia - Neubiberg DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of manufacturing a semiconductor device comprising first and second field stop zone portions Grant 11,081,544 - Schulze , et al. August 3, 2	2021-08-03
Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method Grant 11,004,963 - Spulber , et al. May 11, 2	2021-05-11
Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions Grant 10,734,484 - Meiser , et al.	2020-08-04
N-channel bipolar power semiconductor device with P-layer in the drift volume Grant 10,546,939 - Baburske , et al. Ja	2020-01-28
Silicon Carbide Semiconductor Device with Trench Gate Structure and Horizontally Arranged Channel and Current Spread Regions App 20190296110 - Meiser; Andreas ; et al.	2019-09-26
N-channel Bipolar Power Semiconductor Device With P-layer In The Drift Volume App 20190288088 - Baburske; Roman ; et al.	2019-09-19
N-channel bipolar power semiconductor device with p-layer in the drift volume Grant 10,332,973 - Baburske , et al.	2019-06-25
Method of Manufacturing a Semiconductor Device Comprising First and Second Field Stop Zone Portions App 20190165090 - Schulze; Hans-Joachim ; et al.	2019-05-30
Insulated Gate Bipolar Transistor Having First and Second Field Stop Zone Portions and Manufacturing Method App 20190165151 - Spulber; Oana Julia ; et al.	2019-05-30
N-channel Bipolar Power Semiconductor Device With P-layer In The Drift Volume App 20180269304 - Baburske; Roman ; et al.	2018-09-20
n-channel bipolar power semiconductor device with p-layer in the drift volume Grant 9,978,851 - Baburske , et al. May 22, 2	2018-05-22
N-channel Bipolar Power Semiconductor Device With P-layer In The Drift Volume App 20180019319 - Baburske; Roman ; et al.	2018-01-18

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