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name:-0.0016281604766846
name:-0.015653133392334
name:-0.00044894218444824
Spratt, David B. Patent Filings

Spratt, David B.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Spratt, David B..The latest application filed is for "high gain bipolar junction transistor with counterdoped base in cmos technology".

Company Profile
0.10.1
  • Spratt, David B. - Plano TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High gain bipolar junction transistor with counterdoped base in CMOS technology
App 20020058373 - Shen, Chi-Cheong ;   et al.
2002-05-16
On-chip ESD protection in dual voltage CMOS
Grant 6,143,594 - Tsao , et al. November 7, 2
2000-11-07
On-chip ESD protection in dual voltage CMOS
Grant 6,137,144 - Tsao , et al. October 24, 2
2000-10-24
Method of forming a recessed contact bipolar transistor and field effect device
Grant 5,075,241 - Spratt , et al. December 24, 1
1991-12-24
Method for forming protective barrier on silicided regions
Grant 5,041,394 - Spratt , et al. August 20, 1
1991-08-20
Method for forming a recessed contact bipolar transistor and field effect transistor
Grant 4,985,744 - Spratt , et al. January 15, 1
1991-01-15
Recessed contact bipolar transistor and method
Grant 4,897,703 - Spratt , et al. January 30, 1
1990-01-30
Anadization system with remote voltage sensing and active feedback control capabilities
Grant 4,891,103 - Zorinsky , et al. January 2, 1
1990-01-02
Anodizable strain layer for SOI semiconductor structures
Grant 4,849,370 - Spratt , et al. July 18, 1
1989-07-18
Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer
Grant 4,810,667 - Zorinsky , et al. March 7, 1
1989-03-07
Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
Grant 4,628,591 - Zorinsky , et al. December 16, 1
1986-12-16

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