SPINNAKER SEMICONDUCTOR, INC.

Patent Applications and Registrations

Patent applications and USPTO patent grants for SPINNAKER SEMICONDUCTOR, INC..The latest application filed is for "power transistor with metal source and method of manufacture".

Company Profile

0.10.6

SPINNAKER SEMICONDUCTOR, INC. - BLOOMINGTON MN
Spinnaker Semiconductor, Inc. - Eagan MN
Spinnaker Semiconductor, Inc. -
Spinnaker Semiconductor, Inc. - Eden Prairie MN
Spinnaker Semiconductor, Inc. - Edina MN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Power Transistor With Metal Source And Method Of Manufacture App 20100059819 - Snyder; John P.	2010-03-11
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate App 20080079107 - Snyder; John P. ; et al.	2008-04-03
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Grant 7,294,898 - Snyder , et al. November 13, 2	2007-11-13
Schottky-barrier mosfet manufacturing method using isotropic etch process Grant 7,291,524 - Snyder , et al. November 6, 2	2007-11-06
Short-channel Schottky-barrier MOSFET device and manufacturing method Grant 7,221,019 - Snyder , et al. May 22, 2	2007-05-22
CMOS device with zero soft error rate App 20070080406 - Snyder; John P. ; et al.	2007-04-12
Dynamic Schottky barrier MOSFET device and method of manufacture App 20070026590 - Snyder; John P. ; et al.	2007-02-01
Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate App 20070007605 - Snyder; John P. ; et al.	2007-01-11
Short-channel schottky-barrier MOSFET device and manufacturing method App 20060244052 - Snyder; John P. ; et al.	2006-11-02
Short-channel Schottky-barrier MOSFET device and manufacturing method Grant 7,052,945 - Snyder May 30, 2	2006-05-30
Schottky barrier CMOS fabrication method Grant 6,974,737 - Snyder , et al. December 13, 2	2005-12-13
Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate Grant 6,949,787 - Snyder , et al. September 27, 2	2005-09-27
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Grant 6,784,035 - Snyder , et al. August 31, 2	2004-08-31
Short-channel schottky-barrier MOSFET device and manufacturing method Grant 6,744,103 - Snyder June 1, 2	2004-06-01
Short-channel schottky-barrier MOSFET device Grant 6,495,882 - Snyder December 17, 2	2002-12-17
Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts Grant 6,303,479 - Snyder October 16, 2	2001-10-16

Company Registrations

NCAGE Code	1KZY3	SPINNAKER SEMICONDUCTOR INC.
CAGE Code	1KZY3	SPINNAKER SEMICONDUCTOR, INC.
DUNS	061135153	SPINNAKER SEMICONDUCTOR, INC.
SEC	0001191633	SPINNAKER SEMICONDUCTOR INC

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