Speck; James Stephen

Patent Applications and Registrations

Patent applications and USPTO patent grants for Speck; James Stephen.The latest application filed is for "hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region".

Company Profile

0.9.14

Speck; James Stephen - Goleta CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition Grant 9,039,834 - Craven , et al. May 26, 2	2015-05-26
SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N App 20130099202 - Hardy; Matthew T. ; et al.	2013-04-25
Hole Blocking Layer For The Prevention Of Hole Overflow And Non-radiative Recombination At Defects Outside The Active Region App 20130100978 - Hardy; Matthew T. ; et al.	2013-04-25
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES App 20120205623 - Craven; Michael D. ; et al.	2012-08-16
Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes Grant 8,227,819 - Zhong , et al. July 24, 2	2012-07-24
Non-polar Gallium Nitride Thin Films Grown By Metalorganic Chemical Vapor Deposition App 20110229639 - Craven; Michael D. ; et al.	2011-09-22
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES App 20110204329 - Craven; Michael D. ; et al.	2011-08-25
Growth Of Planar Reduced Dislocation Density M-plane Gallium Nitride By Hydride Vapor Phase Epitaxy App 20110193094 - Haskell; Benjamin A. ; et al.	2011-08-11
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices Grant 7,982,208 - Craven , et al. July 19, 2	2011-07-19
Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy Grant 7,956,360 - Haskell , et al. June 7, 2	2011-06-07
Fabrication Of Nonpolar Indium Gallium Nitride Thin Films, Heterostructures And Devices By Metalorganic Chemical Vapor Deposition App 20090146162 - Chakraborty; Arpan ; et al.	2009-06-11
Growth Of Planar Reduced Dislocation Density M-plane Gallium Nitride By Hydride Vapor Phase Epitaxy App 20070184637 - Haskell; Benjamin A. ; et al.	2007-08-09
Fabrication Of Nonpolar Indium Gallium Nitride Thin Films, Heterostructures And Devices By Metalorganic Chemical Vapor Deposition App 20070111488 - Chakraborty; Arpan ; et al.	2007-05-17
Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy Grant 7,208,393 - Haskell , et al. April 24, 2	2007-04-24
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Grant 7,186,302 - Chakraborty , et al. March 6, 2	2007-03-06
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices App 20060278865 - Craven; Michael D. ; et al.	2006-12-14
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices Grant 7,091,514 - Craven , et al. August 15, 2	2006-08-15
Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy App 20050245095 - Haskell, Benjamin A. ; et al.	2005-11-03
Dislocation reduction in non-polar gallium nitride thin films Grant 6,900,070 - Craven , et al. May 31, 2	2005-05-31
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices App 20050040385 - Craven, Michael D. ; et al.	2005-02-24
Dislocation reduction in non-polar gallium nitride thin films App 20030230235 - Craven, Michael D. ; et al.	2003-12-18
Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition App 20030198837 - Craven, Michael D. ; et al.	2003-10-23

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