Sonoyama; Takahiro
Patent Applications and Registrations
Patent applications and USPTO patent grants for Sonoyama; Takahiro.The latest application filed is for "semiconductor device and manufacturing method of the same".
- Sonoyama; Takahiro - Kiyosu JP
- Sonoyama; Takahiro - Kiyosu-shi JP
- Sonoyama; Takahiro - Aichi-ken JP
| Patent | Date |
|---|---|
| Semiconductor device Grant 10,074,728 - Oka , et al. September 11, 2 | 2018-09-11 |
| Semiconductor device including insulating film that includes negatively charged microcrystal Grant 10,026,808 - Oka , et al. July 17, 2 | 2018-07-17 |
| MIS-type semiconductor device Grant 9,793,369 - Oka , et al. October 17, 2 | 2017-10-17 |
| Semiconductor Device And Manufacturing Method Of The Same App 20170263701 - OKA; Tohru ; et al. | 2017-09-14 |
| Semiconductor device including an insulating layer which includes negatively charged microcrystal Grant 9,691,846 - Oka , et al. June 27, 2 | 2017-06-27 |
| Semiconductor Device App 20170025515 - OKA; Toru ; et al. | 2017-01-26 |
| Semiconductor device Grant 9,508,822 - Oka , et al. November 29, 2 | 2016-11-29 |
| Semiconductor Device And Manufacturing Method Of The Same App 20160163792 - OKA; Tohru ; et al. | 2016-06-09 |
| Manufacturing method of MIS-type semiconductor device, including heating a zirconium oxynitride (ZrON) layer Grant 9,299,567 - Mizukami , et al. March 29, 2 | 2016-03-29 |
| MIS-type Semiconductor Device App 20160064502 - Oka; Tohru ; et al. | 2016-03-03 |
| Semiconductor Device App 20140291775 - OKA; Toru ; et al. | 2014-10-02 |
| Manufacturing Method Of Mis-type Semiconductor Device App 20140287572 - MIZUKAMI; Kiyotaka ; et al. | 2014-09-25 |
| Mis Type Semiconductor Device And Production Method Therefor App 20130161765 - SONOYAMA; Takahiro ; et al. | 2013-06-27 |
| Group III Nitride semiconductor HFET and method for producing the same App 20090001384 - Kosaki; Masayoshi ; et al. | 2009-01-01 |
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