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Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structures
Grant 11,127,739 - Lee , et al. September 21, 2 | 2021-09-21 |
Semiconductor Devices And Methods Of Fabricating The Same
App 20210020631 - Park; Moon-Kyu ; et al. | 2021-01-21 |
Semiconductor devices and methods of fabricating the same
Grant 10,872,888 - Park , et al. December 22, 2 | 2020-12-22 |
Methods of manufacturing integrated circuit devices having a fin-type active region
Grant 10,593,670 - Song , et al. | 2020-03-17 |
Semiconductor device
Grant 10,559,687 - Song , et al. Feb | 2020-02-11 |
Semiconductor devices having multi-threshold voltage
Grant 10,529,817 - Song , et al. J | 2020-01-07 |
Semiconductor Devices And Methods Of Fabricating The Same
App 20190312030 - Park; Moon-Kyu ; et al. | 2019-10-10 |
Semiconductor devices and methods of fabricating the same
Grant 10,361,194 - Park , et al. | 2019-07-23 |
Semiconductor Devices Having Multi-threshold Voltage
App 20190189767 - SONG; Jae-yeol ; et al. | 2019-06-20 |
Semiconductor devices having work function metal films and tuning materials
Grant 10,312,340 - Kim , et al. | 2019-06-04 |
Semiconductor Device
App 20190097048 - SONG; Jae Yeol ; et al. | 2019-03-28 |
Methods Of Fabricating Semiconductor Devices Using Mos Transistors With Nonuniform Gate Electrode Structures
App 20180331100 - Lee; Hye-Lan ; et al. | 2018-11-15 |
Finfet semiconductor device and method of manufacturing the same
Grant 10,115,797 - Song , et al. October 30, 2 | 2018-10-30 |
Semiconductor Devices Having Work Function Metal Films and Tuning Materials
App 20180019314 - Kim; Wan-Don ; et al. | 2018-01-18 |
Methods of Manufacturing Integrated Circuit Devices Having a FIN-Type Active Region
App 20180012889 - Song; Jae-Yeol ; et al. | 2018-01-11 |
Integrated circuit devices having a Fin-type active region and methods of manufacturing the same
Grant 9,806,075 - Song , et al. October 31, 2 | 2017-10-31 |
Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth element
Grant 9,793,368 - Son , et al. October 17, 2 | 2017-10-17 |
Semiconductor devices having work function metal films and tuning materials
Grant 9,780,183 - Kim , et al. October 3, 2 | 2017-10-03 |
Semiconductor Devices And Methods Of Fabricating The Same
App 20170125408 - PARK; Moon-Kyu ; et al. | 2017-05-04 |
Semiconductor Device And Method For Manufacturing The Same
App 20160351569 - SONG; Jae-yeol ; et al. | 2016-12-01 |
Semiconductor Devices Including A Rare Earth Element And Methods Of Forming Semiconductor Devices Including A Rare Earth Element
App 20160315164 - Son; Hyeok-jun ; et al. | 2016-10-27 |
Integrated Circuit Devices Having A Fin-type Active Region And Methods Of Manufacturing The Same
App 20160315080 - SONG; Jae-yeol ; et al. | 2016-10-27 |
Semiconductor Device And Method Of Manufacturing The Same
App 20160308012 - Song; Jae-yeol ; et al. | 2016-10-20 |
Semiconductor Devices Having Work Function Metal Films And Tuning Materials
App 20160225868 - KIM; Wan-Don ; et al. | 2016-08-04 |
Fin-type field effect transistors including aluminum doped metal-containing layer
Grant 9,240,483 - Lee , et al. January 19, 2 | 2016-01-19 |
Method of manufacturing a semiconductor device having sequentially stacked high-k dielectric layers
Grant 9,048,307 - Song , et al. June 2, 2 | 2015-06-02 |
Semiconductor Devices Using Mos Transistors With Nonuniform Gate Electrode Structures And Methods Of Fabricating The Same
App 20140374840 - Lee; Hye-Lan ; et al. | 2014-12-25 |
Semiconductor Devices and Methods for Fabricating the Same
App 20140203335 - Song; Jae-Yeol ; et al. | 2014-07-24 |
Fin-type Field Effect Transistors Including Aluminum Doped Metal-containing Layer
App 20130277748 - LEE; June-Hee ; et al. | 2013-10-24 |
Semiconductor Device And Manufacturing Method
App 20120319216 - Song; Jae-Yeol ; et al. | 2012-12-20 |
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