Song; Haizheng

Patent Applications and Registrations

Patent applications and USPTO patent grants for Song; Haizheng.The latest application filed is for "method of growing high quality, thick sic epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition".

Company Profile

0.5.5

Song; Haizheng - Columbia SC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition Grant 10,260,166 - Sudarshan , et al.	2019-04-16
Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition App 20180044816 - Sudarshan; Tangali S. ; et al.	2018-02-15
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition Grant 9,885,124 - Sudarshan , et al. February 6, 2	2018-02-06
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films Grant 9,644,287 - Sudarshan , et al. May 9, 2	2017-05-09
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films Grant 9,644,288 - Sudarshan , et al. May 9, 2	2017-05-09
Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films App 20150129897 - Sudarshan; Tangali S. ; et al.	2015-05-14
Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films App 20150128850 - Sudarshan; Tangali S. ; et al.	2015-05-14
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films Grant 8,900,979 - Sudarshan , et al. December 2, 2	2014-12-02
Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition App 20140338588 - Sudarshan; Tangali S. ; et al.	2014-11-20
Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial App 20130143396 - Sudarshan; Tangali S. ; et al.	2013-06-06

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