SONG; GUO XIANG

Patent Applications and Registrations

Patent applications and USPTO patent grants for SONG; GUO XIANG.The latest application filed is for "split-gate flash memory cell with improved control gate capacitive coupling, and method of making same".

Company Profile

2.5.9

SONG; GUO XIANG - Shanghai CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Split-gate Flash Memory Cell With Improved Control Gate Capacitive Coupling, And Method Of Making Same App 20220293756 - Xing; Leo ; et al.	2022-09-15
Method of making memory cells, high voltage devices and logic devices on a substrate Grant 11,444,091 - Sun , et al. September 13, 2	2022-09-13
Method Of Forming A Semiconductor Device With Memory Cells, High Voltage Devices And Logic Devices On A Substrate App 20220278119 - Song; Guo Xiang ; et al.	2022-09-01
Method Of Making Split-gate Non-volatile Memory Cells With Erase Gates Disposed Over Word Line Gates App 20220216316 - Wang; Chunming ; et al.	2022-07-07
Split Gate Non-volatile Memory Cells, Hv And Logic Devices With Finfet Structures, And Method Of Making Same App 20220139940 - Song; Guo Xiang ; et al.	2022-05-05
Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks Grant 11,322,507 - Wang , et al. May 3, 2	2022-05-03
Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same Grant 11,315,635 - Wang , et al. April 26, 2	2022-04-26
Split-gate non-volatile memory cells with erase gates disposed over word line gates, and method of making same Grant 11,316,024 - Wang , et al. April 26, 2	2022-04-26
Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devices Grant 11,315,940 - Wang , et al. April 26, 2	2022-04-26
Split-gate Non-volatile Memory Cells With Erase Gates Disposed Over Word Line Gates, And Method Of Making Same App 20220102517 - Wang; Chunming ; et al.	2022-03-31
Split-gate, 2-bit Non-volatile Memory Cell With Erase Gate Disposed Over Word Line Gate, And Method Of Making Same App 20220101920 - WANG; CHUNMING ; et al.	2022-03-31
Method Of Forming A Device With Planar Split Gate Non-volatile Memory Cells, High Voltage Devices And Finfet Logic Devices App 20220093623 - Wang; Chunming ; et al.	2022-03-24
Method Of Making Memory Cells, High Voltage Devices And Logic Devices On A Substrate With Silicide On Conductive Blocks App 20220052059 - Wang; Chunming ; et al.	2022-02-17
Method Of Making Memory Cells, High Voltage Devices And Logic Devices On A Substrate App 20210398995 - Sun; Jack ; et al.	2021-12-23

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