Solayappan; Narayan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Solayappan; Narayan.The latest application filed is for "thin silicon or germanium sheets and photovolatics formed from thin sheets".

Company Profile

0.26.22

Solayappan; Narayan - Cupertino CA
Solayappan; Narayan - Nanjundapuram IN
Solayappan; Narayan - Colorado Springs CO

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Thin Silicon Or Germanium Sheets And Photovolatics Formed From Thin Sheets App 20100190288 - Hieslmair; Henry ; et al.	2010-07-29
Reactive flow deposition and synthesis of inorganic foils App 20090017292 - Hieslmair; Henry ; et al.	2009-01-15
Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same Grant 7,459,318 - Paz de Araujo , et al. December 2, 2	2008-12-02
Thin silicon or germanium sheets and photovoltaics formed from thin sheets App 20070212510 - Hieslmair; Henry ; et al.	2007-09-13
Stacked memory cell having diffusion barriers Grant 7,187,079 - Joshi , et al. March 6, 2	2007-03-06
Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same App 20060194348 - Araujo; Carlos A. Paz de ; et al.	2006-08-31
Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same Grant 7,075,134 - Paz de Araujo , et al. July 11, 2	2006-07-11
Barrier layers for protecting metal oxides from hydrogen degradation Grant 7,064,374 - Solayappan , et al. June 20, 2	2006-06-20
Ferroelectric memory and method of operating same App 20050094457 - Chen, Zheng ; et al.	2005-05-05
Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7 Grant 6,867,452 - Hayashi , et al. March 15, 2	2005-03-15
Ferroelectric composite material, method of making same and memory utilizing same Grant 6,831,313 - Uchiyama , et al. December 14, 2	2004-12-14
Barrier layers for protecting metal oxides from hydrogen degradation App 20040232468 - Solayappan, Narayan ; et al.	2004-11-25
Low thermal budget fabrication of ferroelectric memory using RTP Grant 6,815,223 - Celinska , et al. November 9, 2	2004-11-09
Lanthanide series layered superlattice materials for integrated circuit applications App 20040211998 - Araujo, Carlos A. Paz de ; et al.	2004-10-28
Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth Grant 6,787,181 - Uchiyama , et al. September 7, 2	2004-09-07
Barrier layers for protecting metal oxides from hydrogen degradation Grant 6,781,184 - Solayappan , et al. August 24, 2	2004-08-24
Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same App 20040129961 - Paz de Araujo, Carlos A. ; et al.	2004-07-08
Ferroelectric composite material, method of making same and memory utilizing same App 20040129987 - Uchiyama, Kiyoshi ; et al.	2004-07-08
Stacked memory cell having diffusion barriers Grant 6,743,643 - Joshi , et al. June 1, 2	2004-06-01
Low thermal budget fabrication of ferroelectric memory using RTP App 20040101977 - Celinska, Jolanta ; et al.	2004-05-27
Stacked memory cell and process of fabricating same App 20040089920 - Joshi, Vikram ; et al.	2004-05-13
Chemical vapor deposition process for fabricating layered superlattice materials Grant 6,706,585 - Uchiyama , et al. March 16, 2	2004-03-16
Stacked memory cell having diffusion barriers App 20040046198 - Joshi, Vikram ; et al.	2004-03-11
Chemical vapor deposition process for fabricating layered superlattice materials App 20030203513 - Uchiyama, Kiyoshi ; et al.	2003-10-30
Lanthanide series layered superlattice materials for integrated circuit appalications App 20030152813 - Paz de Araujo, Carlos A. ; et al.	2003-08-14
Stacked memory cell having diffusion barriers App 20030132470 - Joshi, Vikram ; et al.	2003-07-17
Low temperature oxidizing method of making a layered superlattice material Grant 6,582,972 - Joshi , et al. June 24, 2	2003-06-24
Stacked memory cell and process of fabricating same App 20030102531 - Joshi, Vikram ; et al.	2003-06-05
Barrier layers for protecting metal oxides from hydrogen degradation App 20030098497 - Solayappan, Narayan ; et al.	2003-05-29
Ferroelectric and high dielectric constant transistors Grant 6,559,469 - Paz de Araujo , et al. May 6, 2	2003-05-06
Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth App 20030080325 - Uchiyama, Kiyoshi ; et al.	2003-05-01
Method for forming an integrated circuit Grant 6,541,279 - Hayashi , et al. April 1, 2	2003-04-01
Interlayer oxide containing thin films for high dielectric constant application App 20030052357 - Hayashi, Shinichiro ; et al.	2003-03-20
Method and apparatus for fabrication of thin films by chemical vapor deposition Grant 6,511,718 - Paz de Araujo , et al. January 28, 2	2003-01-28
Interlayer oxide containing thin films for high dielectric constant application Grant 6,495,878 - Hayashi , et al. December 17, 2	2002-12-17
Ferroelectric composite material, method of making same, and memory utilizing same App 20020168785 - Paz de Araujo, Carlos A. ; et al.	2002-11-14
Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same Grant 6,326,315 - Uchiyama , et al. December 4, 2	2001-12-04
Metal oxide thin films for high dielectric constant application App 20010012698 - Hayashi, Shinichiro ; et al.	2001-08-09
Recovery Of Electronic Properties In Hydrogen-damaged Ferroelectrics By Low-temperature Annealing In An Inert Gas App 20010002273 - JOSHI, VIKRAM ; et al.	2001-05-31
Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size Grant 6,116,184 - Solayappan , et al. September 12, 2	2000-09-12
Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition Grant 6,110,531 - Paz de Araujo , et al. August 29, 2	2000-08-29
Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same Grant 6,104,049 - Solayappan , et al. August 15, 2	2000-08-15
Method and apparatus for misted deposition of integrated circuit quality thin films Grant 5,997,642 - Solayappan , et al. December 7, 1	1999-12-07
Process for fabricating layered superlattice materials and AB0.sub.3 type metal oxides without exposure to oxygen at high temperatures Grant 5,962,069 - Schindler , et al. October 5, 1	1999-10-05
Low imprint ferroelectric material for long retention memory and method of making the same Grant 5,883,828 - Cuchiaro , et al. March 16, 1	1999-03-16
Liquid source formation of thin films using hexamethyl-disilazane Grant 5,849,071 - Derbenwick , et al. December 15, 1	1998-12-15
Liquid source formation of thin films using hexamethyl-disilazane Grant 5,843,516 - Derbenwick , et al. December 1, 1	1998-12-01
Low imprint ferroelectric material for long retention memory and method of making the same Grant 5,784,310 - Cuchiaro , et al. July 21, 1	1998-07-21

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