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Patent applications and USPTO patent grants for Societe pour l'Etude et la Fabrication des Circuits Integres Speciaux -.The latest application filed is for "integrated circuit comprising mos transistors having electrodes of metallic silicide and a method of fabrication of said circuit".
Patent | Date |
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Integrated circuit comprising MOS transistors having electrodes of metallic silicide and a method of fabrication of said circuit Grant 4,731,318 - Roche , et al. March 15, 1 | 1988-03-15 |
Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit Grant 4,592,802 - Deleonibus , et al. June 3, 1 | 1986-06-03 |
Integrated logic network with simplified programming Grant 4,488,246 - Brice December 11, 1 | 1984-12-11 |
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