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Patent applications and USPTO patent grants for Smythe, III; John A..The latest application filed is for "epitaxial single crystalline silicon growth for a horizontal access device".
Patent | Date |
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Epitaxial Single Crystalline Silicon Growth For A Horizontal Access Device App 20220223602 - Saeedi Vahdat; Armin ;   et al. | 2022-07-14 |
Gate dielectric repair on three-node access device formation for vertical three-dimensional (3D) memory Grant 11,329,051 - Smythe, III , et al. May 10, 2 | 2022-05-10 |
Epitaxial Single Crystalline Silicon Growth For Memory Arrays App 20220102384 - Walters; Glen H. ;   et al. | 2022-03-31 |
Epitaxial Single Crystalline Silicon Growth For A Horizontal Access Device App 20220102356 - Saeedi Vahdat; Armin ;   et al. | 2022-03-31 |
Epitaxtal single crystalline silicon growth for a horizontal access device Grant 11,289,491 - Saeedi Vahdat , et al. March 29, 2 | 2022-03-29 |
Gate Dielectric Repair On Three-node Access Device Formation For Vertical Three-dimensional (3d) Memory App 20220068933 - Smythe III; John A. ;   et al. | 2022-03-03 |
Channel Integration In A Three-node Access Device For Vertical Three Dimensional (3d) Memory App 20220045060 - Sills; Scott E. ;   et al. | 2022-02-10 |
Three-node Access Device For Vertical Three Dimensional (3d) Memory App 20220045061 - Lee; Si-Woo ;   et al. | 2022-02-10 |
Source/drain Integration In A Three-node Access Device For Vertical Three Dimensional (3d) Memory App 20220045069 - Sills; Scott E. ;   et al. | 2022-02-10 |
Channel Conduction In Semiconductor Devices App 20220045165 - Karda; Kamal M. ;   et al. | 2022-02-10 |
Storage Node After Three-node Access Device Formation For Vertical Three Dimensional (3d) Memory App 20220045062 - Saeedi Vahdat; Armin ;   et al. | 2022-02-10 |
Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory Grant 11,239,117 - Saeedi Vahdat , et al. February 1, 2 | 2022-02-01 |
Storage node after three-node access device formation for vertical three dimensional (3D) memory Grant 11,227,864 - Saeedi Vahdat , et al. January 18, 2 | 2022-01-18 |
Channel conduction in semiconductor devices Grant 11,171,206 - Karda , et al. November 9, 2 | 2021-11-09 |
Reduction of crystal growth resulting from annealing a conductive material Grant 11,081,364 - Milojevic , et al. August 3, 2 | 2021-08-03 |
Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio Grant 10,964,536 - Fabreguette , et al. March 30, 2 | 2021-03-30 |
Channel Conduction In Semiconductor Devices App 20210013305 - Karda; Kamal M. ;   et al. | 2021-01-14 |
Reduction Of Crystal Growth Resulting From Annealing A Conductive Material App 20200251349 - Kind Code | 2020-08-06 |
Formation Of An Atomic Layer Of Germanium On A Substrate Material App 20200251334 - Kind Code | 2020-08-06 |
Resistive RAM devices and methods Grant 9,634,250 - Greeley , et al. April 25, 2 | 2017-04-25 |
Trench isolation implantation Grant 9,514,976 - Sandhu , et al. December 6, 2 | 2016-12-06 |
Resistive Ram Devices And Methods App 20160315258 - Greeley; Joseph N. ;   et al. | 2016-10-27 |
Resistive RAM devices and methods Grant 9,419,219 - Greeley , et al. August 16, 2 | 2016-08-16 |
Forming Memory Using High Power Impulse Magnetron Sputtering App 20160155619 - Hu; Yongjun Jeff ;   et al. | 2016-06-02 |
GCIB-treated resistive device Grant 9,343,677 - Smythe, III , et al. May 17, 2 | 2016-05-17 |
Forming memory using high power impulse magnetron sputtering Grant 9,249,498 - Hu , et al. February 2, 2 | 2016-02-02 |
Resistive Ram Devices And Methods App 20150357568 - Greeley; Joseph N. ;   et al. | 2015-12-10 |
Resistive RAM devices and methods Grant 9,142,770 - Greeley , et al. September 22, 2 | 2015-09-22 |
GCIB-treated resistive device Grant 9,087,989 - Smythe, III , et al. July 21, 2 | 2015-07-21 |
Gcib-treated Resistive Device App 20150200360 - Smythe, III; John A. ;   et al. | 2015-07-16 |
Resistive Ram Devices And Methods App 20140319446 - Greeley; Joseph N. ;   et al. | 2014-10-30 |
Trench Isolation Implantation App 20140241053 - Sandhu; Gurtej S. ;   et al. | 2014-08-28 |
Gcib-treated Resistive Device App 20140141590 - Smythe, III; John A. ;   et al. | 2014-05-22 |
Trench isolation implantation Grant 8,686,535 - Sandhu , et al. April 1, 2 | 2014-04-01 |
Resistive memory and methods of processing resistive memory Grant 8,617,959 - Sandhu , et al. December 31, 2 | 2013-12-31 |
Low temperature process for polysilazane oxidation/densification Grant 8,575,040 - Fucsko , et al. November 5, 2 | 2013-11-05 |
Resistive Memory And Methods Of Processing Resistive Memory App 20130099189 - Sandhu; Gurtej S. ;   et al. | 2013-04-25 |
Resistive memory and methods of processing resistive memory Grant 8,324,065 - Sandhu , et al. December 4, 2 | 2012-12-04 |
Resistive Ram Devices And Methods App 20120267599 - Greeley; Joseph N. ;   et al. | 2012-10-25 |
Resistive Ram Devices And Methods App 20120001144 - Greeley; Joseph N. ;   et al. | 2012-01-05 |
Forming Memory Using High Power Impulse Magnetron Sputtering App 20110315543 - Hu; Yongjun Jeff ;   et al. | 2011-12-29 |
Liner for shallow trench isolation Grant 7,919,829 - Trivedi , et al. April 5, 2 | 2011-04-05 |
Sub-micron space liner and filler process Grant 7,659,181 - Smythe, III , et al. February 9, 2 | 2010-02-09 |
Isolation trench Grant 7,622,769 - Smythe, III , et al. November 24, 2 | 2009-11-24 |
Low Temperature Process for Polysilazane Oxidation/Densification App 20090269569 - Fucsko; Janos ;   et al. | 2009-10-29 |
Low temperature process for polysilazane oxidation/densification Grant 7,557,420 - Fucsko , et al. July 7, 2 | 2009-07-07 |
Low temperature process for polysilazane oxidation/densification Grant 7,521,378 - Fucsko , et al. April 21, 2 | 2009-04-21 |
Methods for forming shallow trench isolation Grant 7,514,366 - Trivedi , et al. April 7, 2 | 2009-04-07 |
Trench insulation structures including an oxide liner and oxidation barrier Grant 7,501,691 - Smythe, III , et al. March 10, 2 | 2009-03-10 |
Method of forming an isolation structure that includes forming a silicon layer at a base of the recess Grant 7,479,440 - Smythe, III , et al. January 20, 2 | 2009-01-20 |
Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base Grant 7,271,463 - Smythe, III , et al. September 18, 2 | 2007-09-18 |
Liner for shallow trench isolation Grant 7,271,464 - Trivedi , et al. September 18, 2 | 2007-09-18 |
Sub-micron space liner and densification process Grant 7,112,513 - Smythe, III , et al. September 26, 2 | 2006-09-26 |
Method of fabricating a high quality thin oxide Grant 6,190,973 - Berg , et al. February 20, 2 | 2001-02-20 |
Method of eliminating gate leakage in nitrogen annealed oxides Grant 6,165,846 - Carns , et al. December 26, 2 | 2000-12-26 |
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