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name:-0.011754035949707
name:-0.01438307762146
name:-0.00042581558227539
Slonczewski; John Casimir Patent Filings

Slonczewski; John Casimir

Patent Applications and Registrations

Patent applications and USPTO patent grants for Slonczewski; John Casimir.The latest application filed is for "spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element".

Company Profile
0.14.9
  • Slonczewski; John Casimir - Katonah NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Spin-current Switched Magnetic Memory Element Suitable For Circuit Integration And Method Of Fabricating The Memory Element
App 20150001655 - Sun; Jonathan ;   et al.
2015-01-01
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 8,860,105 - Sun , et al. October 14, 2
2014-10-14
Spin-current Switched Magnetic Memory Element Suitable For Circuit Integration And Method Of Fabricating The Memory Element
App 20140008743 - Sun; Jonathan Zanhong ;   et al.
2014-01-09
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 8,558,332 - Sun , et al. October 15, 2
2013-10-15
Creating spin-transfer torque in oscillators and memories
Grant 8,467,235 - Slonczewski June 18, 2
2013-06-18
Creating Spin-transfer Torque In Oscillators And Memories
App 20120014176 - Slonczewski; John Casimir
2012-01-19
Creating spin-transfer torque in oscillators and memories
Grant 8,064,246 - Slonczewski November 22, 2
2011-11-22
Spin-current Switched Magnetic Memory Element Suitable For Circuit Integration And Method Of Fabricating The Memory Element
App 20110147866 - Sun; Jonathan Zanhong ;   et al.
2011-06-23
Creating Spin-transfer Torque In Oscillators And Memories
App 20110141797 - SLONCZEWSKI; JOHN CASIMIR
2011-06-16
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 7,943,399 - Sun , et al. May 17, 2
2011-05-17
Spin-current Switched Magnetic Memory Element Suitable For Circuit Integration And Method Of Fabricating The Memory Element
App 20090317923 - Sun; Jonathan Zanhong ;   et al.
2009-12-24
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
Grant 7,602,000 - Sun , et al. October 13, 2
2009-10-13
Magnetoresistive sensor with magnetic flux paths surrounding non-magnetic regions of ferromagnetic material layer
Grant 6,914,761 - Gambino , et al. July 5, 2
2005-07-05
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
App 20050104101 - Sun, Jonathan Zanhong ;   et al.
2005-05-19
Magnetoresistive sensor with magnetostatic coupling of magnetic regions
App 20040196595 - Gambino, Richard Joseph ;   et al.
2004-10-07
Magnetoresistive sensor with magnetostatic coupling of magnetic regions
Grant 6,775,109 - Gambino , et al. August 10, 2
2004-08-10
Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions
Grant 6,510,031 - Gambino , et al. January 21, 2
2003-01-21
Magnetoresistive sensor with magnetostatic coupling of magnetic regions
App 20020181167 - Gambino, Richard Joseph ;   et al.
2002-12-05
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
Grant 5,841,692 - Gallagher , et al. November 24, 1
1998-11-24
Electronic device using magnetic components
Grant 5,695,864 - Slonczewski December 9, 1
1997-12-09
Magnetic tunnel junctions with controlled magnetic response
Grant 5,650,958 - Gallagher , et al. July 22, 1
1997-07-22
Company Registrations

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