Sklenard; Benoit

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sklenard; Benoit.The latest application filed is for "method for doping source and drain regions of a transistor by means of selective amorphisation".

Company Profile

0.5.5

Sklenard; Benoit - Grenoble FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for doping source and drain regions of a transistor by means of selective amorphisation Grant 9,966,453 - Reboh , et al. May 8, 2	2018-05-08
Method For Doping Source And Drain Regions Of A Transistor By Means Of Selective Amorphisation App 20160300927 - REBOH; Shay ; et al.	2016-10-13
Method for forming doped areas under transistor spacers Grant 9,379,213 - Batude , et al. June 28, 2	2016-06-28
Method for manufacturing a transistor in which the strain applied to the channel is increased Grant 9,343,375 - Batude , et al. May 17, 2	2016-05-17
Recrystallization of source and drain blocks from above Grant 9,246,006 - Batude , et al. January 26, 2	2016-01-26
Method To Fabricate A Transistor Wherein The Level Of Strain Applied To The Channel Is Enhanced App 20160020153 - BATUDE; Perrine ; et al.	2016-01-21
Method of making a 3D integrated circuit Grant 9,018,078 - Sklenard , et al. April 28, 2	2015-04-28
Method For Forming Doped Areas Under Transistor Spacers App 20150044841 - BATUDE; Perrine ; et al.	2015-02-12
Recrystallization Of Source And Drain Blocks From Above App 20150044828 - BATUDE; Perrine ; et al.	2015-02-12
3d Integrated Circuit App 20130193550 - Sklenard; Benoit ; et al.	2013-08-01

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