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Patent applications and USPTO patent grants for Sirajuddin; Khalid M..The latest application filed is for "methods for fabricating dual damascene interconnect structures".
Patent | Date |
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Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber Grant 9,023,227 - Dinev , et al. May 5, 2 | 2015-05-05 |
Methods For Fabricating Dual Damascene Interconnect Structures App 20130288474 - MISHRA; ROHIT ;   et al. | 2013-10-31 |
Increased Deposition Efficiency And Higher Chamber Conductance With Source Power Increase In An Inductively Coupled Plasma (icp) Chamber App 20130005152 - DINEV; JIVKO ;   et al. | 2013-01-03 |
Method of forming a deep trench in a substrate Grant 8,158,522 - Sirajuddin , et al. April 17, 2 | 2012-04-17 |
Method Of Filling A Deep Trench In A Substrate App 20110217832 - Raorane; Digvijay ;   et al. | 2011-09-08 |
Method Of Forming A Deep Trench In A Substrate App 20110201205 - Sirajuddin; Khalid M. ;   et al. | 2011-08-18 |
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