Sierzputowski; Leszek P.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sierzputowski; Leszek P..The latest application filed is for "high electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof".

Company Profile

0.7.5

Sierzputowski; Leszek P. - Union NJ US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof Grant 8,754,449 - Dwilinski , et al. June 17, 2	2014-06-17
Bulk nitride mono-crystal including substrate for epitaxy Grant 7,420,261 - Dwili ski , et al. September 2, 2	2008-09-02
Process for obtaining of bulk monocrystalline gallium-containing nitride Grant 7,364,619 - Dwilinski , et al. April 29, 2	2008-04-29
High Electron Mobility Transistor (Hemt) Made of Layers of Group XIII Element Nitrides and Manufacturing Method Thereof App 20080067523 - Dwilinski; Robert ; et al.	2008-03-20
Nitride semiconductor laser device and a method for improving its performance App 20080050855 - DWILINSKI; Robert ; et al.	2008-02-28
Apparatus for obtaining a bulk single crystal using supercritical ammonia Grant 7,335,262 - Dwilinski , et al. February 26, 2	2008-02-26
Nitride semiconductor laser device and a method for improving its performance Grant 7,315,559 - Dwilinski , et al. January 1, 2	2008-01-01
Bulk nitride mono-crystal including substrate for epitaxy App 20070040240 - Dwilinski; Robert ; et al.	2007-02-22
Bulk nitride mono-crystal including substrate for epitaxy Grant 7,132,730 - Dwili ski , et al. November 7, 2	2006-11-07
Nitride semiconductor laser device and a method for improving its performance App 20050249255 - Dwilinski, Robert ; et al.	2005-11-10
Substrate for epitaxy App 20040261692 - Dwilinski, Robert ; et al.	2004-12-30

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