SICRYSTAL AG

Patent Applications and Registrations

Patent applications and USPTO patent grants for SICRYSTAL AG.The latest application filed is for "method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate".

Company Profile

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SICRYSTAL AG - Nuremberg N/A DE
SICRYSTAL AG - Nuernberg DE
SICRYSTAL AG - Nurnberg DE
SiCrystal AG - ERLANGEN DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate Grant 9,732,438 - Mueller , et al. August 15, 2	2017-08-15
Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing Grant 9,376,764 - Straubinger , et al. June 28, 2	2016-06-28
Method For Producing A Vanadium-doped Silicon Carbide Volume Monocrystal, And Vanadium-doped Silicon Carbide Substrate App 20160068994 - MUELLER; RALF ; et al.	2016-03-10
Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution Grant 8,865,324 - Straubinger , et al. October 21, 2	2014-10-21
Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing App 20130305983 - Straubinger; Thomas Ludwig ; et al.	2013-11-21
Production Method For An Sic Volume Monocrystal With A Homogeneous Lattice Plane Course And A Monocrystalline Sic Substrate With A Homogeneous Lattice Plane Course App 20130171402 - STRAUBINGER; THOMAS ; et al.	2013-07-04
Production Method For An Sic Volume Monocrystal With A Non-homogeneous Lattice Plane Course And A Monocrystalline Sic Substrate With A Non-homogeneous Lattice Plane Course App 20130171403 - STRAUBINGER; THOMAS ; et al.	2013-07-04
Low-dislocation Monocrystalline Aln Substrate App 20120308759 - BARZ; RALPH-UWE ; et al.	2012-12-06
Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate Grant 8,303,924 - Barz , et al. November 6, 2	2012-11-06
Production Method For A Bulk Sic Single Crystal With A Large Facet And Monocrystalline Sic Substrate With Homogeneous Resistance Distribution App 20110300323 - STRAUBINGER; THOMAS ; et al.	2011-12-08
Method Of Producing A Silicon Carbide Bulk Single Crystal With Thermal Treatment, And Low-impedance Monocrystalline Silicon Carbide Substrate App 20110086213 - STRAUBINGER; THOMAS ; et al.	2011-04-14
Production Method For A Low-dislocation Bulk Aln Single Crystal And Low-dislocation Monocrystalline Aln Substrate App 20100255305 - Barz; Ralph-Uwe ; et al.	2010-10-07
Thermally Insulated Configuration And Method For Producing A Bulk Sic Crystal App 20100175614 - Straubinger; Thomas	2010-07-15
Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate App 20100159182 - Straubinger; Thomas ; et al.	2010-06-24

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