Siced Electronics Development GmbH & Co. KG

Patent Applications and Registrations

Patent applications and USPTO patent grants for Siced Electronics Development GmbH & Co. KG.The latest application filed is for "semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure".

Company Profile

0.16.3

Siced Electronics Development GmbH & Co. KG - Erlangen DE
Siced Electronics Development GmbH & Co. KG -

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Lightly doped silicon carbide wafer and use thereof in high power devices Grant 8,803,160 - Ellison , et al. August 12, 2	2014-08-12
Lightly doped silicon carbide wafer and use thereof in high power devices Grant 8,097,524 - Ellison , et al. January 17, 2	2012-01-17
SiC-PN power diode Grant 7,646,026 - Friedrichs , et al. January 12, 2	2010-01-12
Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure Grant 7,615,802 - Elpelt , et al. November 10, 2	2009-11-10
Lightly doped silicon carbide wafer and use thereof in high power devices Grant 7,482,068 - Ellison , et al. January 27, 2	2009-01-27
Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure App 20060255373 - Elpelt; Rudolf ; et al.	2006-11-16
Semiconductor structure with a switch element and an edge element Grant 7,071,503 - Dohnke , et al. July 4, 2	2006-07-04
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Grant 6,936,850 - Friedrichs , et al. August 30, 2	2005-08-30
Semiconductor structure with a switch element and an edge element App 20050062112 - Dohnke, Karl ; et al.	2005-03-24
Switching device for switching at a high operating voltage Grant 6,822,842 - Friedrichs , et al. November 23, 2	2004-11-23
Method for contacting a semiconductor configuration Grant 6,815,351 - Friedrichs , et al. November 9, 2	2004-11-09
Device for mounting a substrate and method for producing an insert for a susceptor Grant 6,740,167 - Rupp , et al. May 25, 2	2004-05-25
Junction field-effect transistor with more highly doped connecting region Grant 6,693,314 - Mitlehner , et al. February 17, 2	2004-02-17
Semiconductor construction with buried island region and contact region Grant 6,693,322 - Friedrichs , et al. February 17, 2	2004-02-17
J-FET semiconductor configuration Grant 6,653,666 - Mitlehner , et al. November 25, 2	2003-11-25
Method for contacting a semiconductor configuration App 20030146437 - Friedrichs, Peter ; et al.	2003-08-07
Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device Grant 6,468,890 - Bartsch , et al. October 22, 2	2002-10-22
Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure Grant 6,316,791 - Schorner , et al. November 13, 2	2001-11-13
Method for patterning semiconductors with high precision, good homogeneity and reproducibility Grant 6,204,135 - Peters , et al. March 20, 2	2001-03-20

Company Registrations

NCAGE Code	DN878	SICED ELECTRONICS DEVELOPMENT GMBH & CO. KG
CAGE Code	DN878	SICED ELECTRONICS DEVELOPMENT GMBH& CO. KG SICED ELECTRONICS DEVELOPMENT

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