Shu; Jen

Patent Applications and Registrations

Patent applications and USPTO patent grants for Shu; Jen.The latest application filed is for "contact and interconnect metallization for solar cells".

Company Profile

0.8.6

Shu; Jen - Saratoga CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Contact and interconnect metallization for solar cells Grant 9,184,333 - Parikh , et al. November 10, 2	2015-11-10
Contact And Interconnect Metallization For Solar Cells App 20130288424 - PARIKH; Suketu Arun ; et al.	2013-10-31
Double exposure patterning with carbonaceous hardmask Grant 8,293,460 - Chen , et al. October 23, 2	2012-10-23
Method of cleaning and forming a negatively charged passivation layer over a doped region Grant 8,268,728 - Stewart , et al. September 18, 2	2012-09-18
Self-aligned multi-patterning for advanced critical dimension contacts Grant 8,084,310 - Mebarki , et al. December 27, 2	2011-12-27
Method Of Cleaning And Forming A Negatively Charged Passivation Layer Over A Doped Region App 20110287577 - STEWART; Michael P. ; et al.	2011-11-24
Method of cleaning and forming a negatively charged passivation layer over a doped region Grant 8,008,208 - Stewart , et al. August 30, 2	2011-08-30
Method Of Cleaning And Forming A Negatively Charged Passivation Layer Over A Doped Region App 20110136286 - Stewart; Michael P. ; et al.	2011-06-09
Self-aligned Multi-patterning For Advanced Critical Dimension Contacts App 20100136792 - Mebarki; Bencherki ; et al.	2010-06-03
Double Exposure Patterning With Carbonaceous Hardmask App 20090311635 - CHEN; HUI W. ; et al.	2009-12-17
Process for forming a low dielectric constant carbon-containing film Grant 6,632,478 - Gaillard , et al. October 14, 2	2003-10-14
Dielectric films with low dielectric constants Grant 6,576,345 - Van Cleemput , et al. June 10, 2	2003-06-10
Methods for forming a low dielectric constant carbon-containing film, and films produced thereby App 20020164429 - Gaillard, Frederic ; et al.	2002-11-07
Method to deposit SiOCH films with dielectric constant below 3.0 Grant 6,340,628 - Van Cleemput , et al. January 22, 2	2002-01-22

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