| Patent | Date |
|---|
Semiconductor Devices With Liners And Related Methods
App 20220278214 - Larsen; Christopher J. ; et al. | 2022-09-01 |
Microelectronic Devices Including Stair Step Structures, And Related Electronic Devices And Methods
App 20220271051 - Jhothiraman; Jivaan Kishore ; et al. | 2022-08-25 |
Microelectronic devices including stair step structures, and related electronic devices and methods
Grant 11,411,013 - Jhothiraman , et al. August 9, 2 | 2022-08-09 |
Microelectronic Devices Including Tiered Stacks Including Conductive Structures Isolated By Slot Structures, And Related Electronic Systems And Methods
App 20220199641 - Fukuzumi; Yoshiaki ; et al. | 2022-06-23 |
Integrated Assemblies and Methods of Forming Integrated Assemblies
App 20220181334 - Surthi; Shyam ; et al. | 2022-06-09 |
Semiconductor device structures with liners
Grant 11,355,607 - Larsen , et al. June 7, 2 | 2022-06-07 |
Integrated assemblies and methods of forming integrated assemblies
Grant 11,329,064 - Abdelrahaman , et al. May 10, 2 | 2022-05-10 |
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus
App 20220115401 - Dorhout; Justin B. ; et al. | 2022-04-14 |
Integrated assemblies and methods of forming integrated assemblies
Grant 11,296,103 - Surthi , et al. April 5, 2 | 2022-04-05 |
Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
App 20220077186 - Siddik; Manzar ; et al. | 2022-03-10 |
Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus
Grant 11,239,252 - Dorhout , et al. February 1, 2 | 2022-02-01 |
Memory arrays and methods used in forming a memory array comprising strings of memory cells
Grant 11,205,660 - Siddik , et al. December 21, 2 | 2021-12-21 |
Integrated Assemblies and Methods of Forming Integrated Assemblies
App 20210391352 - Abdelrahaman; Ramey M. ; et al. | 2021-12-16 |
Integrated structures and methods of forming integrated structures
Grant 11,195,854 - Li , et al. December 7, 2 | 2021-12-07 |
Methods Of Forming Electronic Devices Using Materials Removable At Different Temperatures
App 20210375898 - Tiwari; Chandra S. ; et al. | 2021-12-02 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor, And Electronic Components Comprising Polysilicon
App 20210351197 - Pavlopoulos; Dimitrios ; et al. | 2021-11-11 |
Integrated Assemblies and Methods of Forming Integrated Assemblies
App 20210343728 - Surthi; Shyam ; et al. | 2021-11-04 |
Arrays Of Elevationally-Extending Strings Of Memory Cells And Methods Used In Forming An Array Of Elevationally-Extending Strings Of Memory Cells
App 20210265171 - Hopkins; John D. ; et al. | 2021-08-26 |
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
Grant 11,094,705 - Pavlopoulos , et al. August 17, 2 | 2021-08-17 |
Stair step structures including insulative materials, and related devices
Grant 11,088,017 - Matovu , et al. August 10, 2 | 2021-08-10 |
Microelectronic Devices Including Stair Step Structures, And Related Electronic Devices And Methods
App 20210210499 - Jhothiraman; Jivaan Kishore ; et al. | 2021-07-08 |
Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells
Grant 11,037,797 - Hopkins , et al. June 15, 2 | 2021-06-15 |
Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
App 20210175247 - Siddik; Manzar ; et al. | 2021-06-10 |
Transistors and arrays of elevationally-extending strings of memory cells
Grant 11,011,538 - Wells , et al. May 18, 2 | 2021-05-18 |
Methods of forming a channel region of a transistor and methods used in forming a memory array
Grant 10,971,360 - Wells , et al. April 6, 2 | 2021-04-06 |
Integrated Assemblies Having Rugged Material Fill, and Methods of Forming Integrated Assemblies
App 20210050364 - Tapias; Nicholas R. ; et al. | 2021-02-18 |
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus
App 20200321352 - Dorhout; Justin B. ; et al. | 2020-10-08 |
Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage
Grant 10,749,041 - Wang , et al. A | 2020-08-18 |
Arrays Of Elevationally-Extending Strings Of Memory Cells And Methods Used In Forming An Array Of Elevationally-Extending String
App 20200251347 - Kind Code | 2020-08-06 |
Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus
Grant 10,720,446 - Dorhout , et al. | 2020-07-21 |
Stair Step Structures Including Insulative Materials, And Related Devices
App 20200203220 - Matovu; John B. ; et al. | 2020-06-25 |
Integrated Structures and Methods of Forming Integrated Structures
App 20200176471 - Li; Jie ; et al. | 2020-06-04 |
Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells
Grant 10,665,469 - Hopkins , et al. | 2020-05-26 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 10,615,174 - Wang , et al. | 2020-04-07 |
Semiconductor devices including a stair step structure, and related methods
Grant 10,600,682 - Matovu , et al. | 2020-03-24 |
Arrays Of Elevationally-Extending Strings Of Memory Cells And Methods Used In Forming An Array Of Elevationally-Extending String
App 20200083059 - Hopkins; John D. ; et al. | 2020-03-12 |
Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks
Grant 10,586,807 - Xie , et al. | 2020-03-10 |
Integrated structures and methods of forming integrated structures
Grant 10,580,792 - Li , et al. | 2020-03-03 |
Programmable Charge Storage Transistor, an Array of Elevationally-Extending Strings of Memory Cells, Methods of Forming Si3Nx, M
App 20200052134 - Wang; Fei ; et al. | 2020-02-13 |
Methods of forming a channel region of a transistor and methods used in forming a memory array
Grant 10,559,466 - Wells , et al. Feb | 2020-02-11 |
Methods Of Forming A Channel Region Of A Transistor And Methods Used In Forming A Memory Array
App 20200020529 - Wells; David H. ; et al. | 2020-01-16 |
Arrays Of Elevationally-Extending Strings Of Memory Cells Having A Stack Comprising Vertically-Alternating Insulative Tiers and
App 20190371815 - Xie; Zhiqiang ; et al. | 2019-12-05 |
Methods of forming si.sub.3n.sub.X, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and
Grant 10,483,407 - Wang , et al. Nov | 2019-11-19 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Ex
App 20190341398 - Pavlopoulos; Dimitrios ; et al. | 2019-11-07 |
Programmable Charge Storage Transistor, An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Si3Nx, M
App 20190326445 - Wang; Fei ; et al. | 2019-10-24 |
Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor And Methods Of
App 20190312056 - Wang; Fei ; et al. | 2019-10-10 |
Transistors And Arrays Of Elevationally-Extending Strings Of Memory Cells
App 20190267394 - Wells; David H. ; et al. | 2019-08-29 |
Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack
Grant 10,388,665 - Xie , et al. A | 2019-08-20 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 10,381,377 - Wang , et al. A | 2019-08-13 |
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
Grant 10,381,367 - Pavlopoulos , et al. A | 2019-08-13 |
Semiconductor Devices Including A Stair Step Structure, And Related Methods
App 20190206727 - Matovu; John B. ; et al. | 2019-07-04 |
Methods Of Forming A Channel Region Of A Transistor And Methods Used In Forming A Memory Array
App 20190198320 - Wells; David H. ; et al. | 2019-06-27 |
Transistors and arrays of elevationally-extending strings of memory cells
Grant 10,297,611 - Wells , et al. | 2019-05-21 |
Methods of forming semiconductor structures having stair step structures
Grant 10,269,625 - Matovu , et al. | 2019-04-23 |
Flash memory cells, components, and methods
Grant 10,217,755 - Kim , et al. Feb | 2019-02-26 |
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus
App 20190043890 - Dorhout; Justin B. ; et al. | 2019-02-07 |
Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus
Grant 10,157,933 - Dorhout , et al. Dec | 2018-12-18 |
Integrated Structures and Methods of Forming Integrated Structures
App 20180358378 - Li; Jie ; et al. | 2018-12-13 |
Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor And Methods Of Processing Silicon Nitride-Comprising Materials
App 20180331120 - Wang; Fei ; et al. | 2018-11-15 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 10,121,799 - Wang , et al. November 6, 2 | 2018-11-06 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor, And Electronic Components Comprising Polysilicon
App 20180294275 - Pavlopoulos; Dimitrios ; et al. | 2018-10-11 |
Polysilicon doping controlled 3D NAND etching
Grant 10,096,610 - Hopkins , et al. October 9, 2 | 2018-10-09 |
Flash Memory Cells, Components, And Methods
App 20180286876 - Kim; Changhan ; et al. | 2018-10-04 |
Integrated structures and methods of forming integrated structures
Grant 10,083,984 - Li , et al. September 25, 2 | 2018-09-25 |
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
Grant 10,014,311 - Pavlopoulos , et al. July 3, 2 | 2018-07-03 |
Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor And Methods Of Processing Silicon Nitride-Comprising Materials
App 20180114795 - Wang; Fei ; et al. | 2018-04-26 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor, And Electronic Components Comprising Polysilicon
App 20180108670 - Pavlopoulos; Dimitrios ; et al. | 2018-04-19 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 9,893,083 - Wang , et al. February 13, 2 | 2018-02-13 |
Integrated Structures and Methods of Forming Integrated Structures
App 20170365617 - Li; Jie ; et al. | 2017-12-21 |
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus
App 20170301685 - Dorhout; Justin B. ; et al. | 2017-10-19 |
Integrated structures and methods of forming integrated structures
Grant 9,773,805 - Li , et al. September 26, 2 | 2017-09-26 |
Semiconductor Devices And Structures
App 20160027882 - Larsen; Christopher J. ; et al. | 2016-01-28 |
Methods of forming semiconductor device structures, memory cells, and arrays
Grant 9,153,455 - Larsen , et al. October 6, 2 | 2015-10-06 |
DRAM Cells and Methods of Forming Silicon Dioxide
App 20150279694 - Srivastava; Shivani ; et al. | 2015-10-01 |
DRAM cells and methods of forming silicon dioxide
Grant 9,064,692 - Srivastava , et al. June 23, 2 | 2015-06-23 |
Methods Of Forming Semiconductor Device Structures And Related Semiconductor Devices And Structures
App 20140374811 - Larsen; Christopher J. ; et al. | 2014-12-25 |
Methods Of Forming Semiconductor Device Structures Including An Insulative Material On A Semiconductive Material, And Related Semiconductor Device Structures And Semiconductor Devices
App 20140199822 - Shrotri; Kunal | 2014-07-17 |
DRAM Cells and Methods of Forming Silicon Dioxide
App 20130277723 - Srivastava; Shivani ; et al. | 2013-10-24 |
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