Shirato; Takehide

Patent Applications and Registrations

Patent applications and USPTO patent grants for Shirato; Takehide.The latest application filed is for "mis type semiconductor device formed in a semiconductor substrate having a well region".

Company Profile

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Shirato; Takehide - Hiratsuka JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
MIS type semiconductor device formed in a semiconductor substrate having a well region Grant 5,128,739 - Shirato July 7, 1	1992-07-07
Semiconductor device having a high breakdown voltage characteristic Grant 4,933,730 - Shirato June 12, 1	1990-06-12
Semiconductor device Grant 4,914,503 - Shirato , et al. April 3, 1	1990-04-03
Complementary semiconductor device having high switching speed and latchup-free capability Grant 4,893,164 - Shirato January 9, 1	1990-01-09
Semiconductor device having a silicon on insulator structure Grant 4,809,056 - Shirato , et al. February 28, 1	1989-02-28
Method for fabricating an insulated-gate FET having a narrow channel width Grant 4,737,471 - Shirato , et al. April 12, 1	1988-04-12
Semiconductor device having a protection circuit with lateral bipolar transistor Grant 4,720,737 - Shirato January 19, 1	1988-01-19
Protection device in an integrated circuit Grant 4,710,791 - Shirato , et al. December 1, 1	1987-12-01
Buffer circuit having a P-channel output mosfet with an open drain terminal connected to an external load Grant 4,677,314 - Shirato , et al. June 30, 1	1987-06-30
Protection element for semiconductor device Grant 4,602,267 - Shirato July 22, 1	1986-07-22
Method of forming conductive channel extensions to active device regions in CMOS device Grant 4,530,150 - Shirato July 23, 1	1985-07-23
Process for producing a semiconductor device Grant 4,348,802 - Shirato September 14, 1	1982-09-14

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