SHIOZAWA, JUN-ICHI
Patent Applications and Registrations
Patent applications and USPTO patent grants for SHIOZAWA, JUN-ICHI.The latest application filed is for "semiconductor device with a thin gate stack having a plurality of insulating layers".
- SHIOZAWA, JUN-ICHI - YOKOHAMA-SHI JP
- Shiozawa; Jun-ichi - Yokohama JP
- Shiozawa; Jun-ichi - Wappingers Falls NY
| Patent | Date |
|---|---|
| Semiconductor Device With A Thin Gate Stack Having A Plurality Of Insulating Layers App 20020014657 - OHIWA, TOKUHISA ; et al. | 2002-02-07 |
| Field effect transistor having elevated source and drain regions and methods of manufacturing the same Grant 6,091,117 - Shiozawa , et al. July 18, 2 | 2000-07-18 |
| Deep trench filling method using silicon film deposition and silicon migration Grant 5,888,876 - Shiozawa , et al. March 30, 1 | 1999-03-30 |
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