Shinohara; Toshiro
Patent Applications and Registrations
Patent applications and USPTO patent grants for Shinohara; Toshiro.The latest application filed is for "semiconductor device".
- Shinohara; Toshiro - Kanagawa JP
- Shinohara; Toshiro - Yokosuka JP
- Shinohara; Toshiro - Yokosuka-shi JP
| Patent | Date |
|---|---|
| Drive unit for electric vehicle Grant 7,775,060 - Nakajima , et al. August 17, 2 | 2010-08-17 |
| Semiconductor device Grant 7,436,004 - Shimoida , et al. October 14, 2 | 2008-10-14 |
| Semiconductor device App 20060118818 - Shimoida; Yoshio ; et al. | 2006-06-08 |
| Stacked semiconductor module and assembling method of the same Grant 7,042,086 - Shimoida , et al. May 9, 2 | 2006-05-09 |
| Integrated drive motor/differential/inverter unit with improved housing for a vehicle Grant 7,030,526 - Tsukamoto , et al. April 18, 2 | 2006-04-18 |
| A.C. motor-inverter integrated drive unit Grant 6,930,417 - Kaneko , et al. August 16, 2 | 2005-08-16 |
| Drive unit for electric vehicle App 20040163409 - Nakajima, Yuki ; et al. | 2004-08-26 |
| Integrated drive motor unit for a vehicle App 20040108778 - Tsukamoto, Masahiro ; et al. | 2004-06-10 |
| Stacked semiconductor module and assembling method of the same App 20040089934 - Shimoida, Yoshio ; et al. | 2004-05-13 |
| A.C. motor-inverter integrated drive unit App 20040090130 - Kaneko, Hiroyuki ; et al. | 2004-05-13 |
| Semiconductor device Grant 6,037,633 - Shinohara March 14, 2 | 2000-03-14 |
| Groove-type semiconductor device Grant 5,682,048 - Shinohara , et al. October 28, 1 | 1997-10-28 |
| Semiconductor accelerometer having a cantilevered beam with a triangular or pentagonal cross section Grant 5,594,172 - Shinohara January 14, 1 | 1997-01-14 |
| Piezoresistive semiconductor device suitable for use in a pressure sensor Grant 5,172,205 - French , et al. December 15, 1 | 1992-12-15 |
| Pressure sensitive semiconductor device with cantilevers Grant 5,138,414 - Shinohara August 11, 1 | 1992-08-11 |
| Thin film semiconductor device Grant 5,075,737 - Shinohara December 24, 1 | 1991-12-24 |
| CMOS having buried layer for carrier recombination Grant 4,920,396 - Shinohara , et al. April 24, 1 | 1990-04-24 |
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