Shin; Hyungsoon
Patent Applications and Registrations
Patent applications and USPTO patent grants for Shin; Hyungsoon.The latest application filed is for "one-transistor dram cell device based on polycrystalline silicon with finfet structure and fabrication method thereof".
- Shin; Hyungsoon - Seoul KR
- Shin; Hyungsoon - Austin TX
| Patent | Date |
|---|---|
| One-transistor dram cell device based on polycrystalline silicon with FinFET structure and fabrication method thereof Grant 10,714,479 - Cho , et al. | 2020-07-14 |
| One-transistor Dram Cell Device Based On Polycrystalline Silicon With Finfet Structure And Fabrication Method Thereof App 20190267381 - Cho; Seongjae ; et al. | 2019-08-29 |
| Magnetic memory cell Grant 8,542,527 - Shin September 24, 2 | 2013-09-24 |
| Magnetic Memory Cell App 20100103730 - Shin; Hyungsoon | 2010-04-29 |
| Method for forming hot-carrier suppressed sub-micron MISFET device Grant 5,093,275 - Tasch, Jr. , et al. March 3, 1 | 1992-03-03 |
| Hot-carrier suppressed sub-micron MISFET device Grant 5,012,306 - Tasch, Jr. , et al. April 30, 1 | 1991-04-30 |
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