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Patent applications and USPTO patent grants for Shin; Hyeon Sang.The latest application filed is for "method of forming trench type isolation film of semiconductor device".
Patent | Date |
---|---|
Method of forming trench type isolation film of semiconductor device Grant 7,468,302 - Shin December 23, 2 | 2008-12-23 |
Method of forming trench type isolation film of semiconductor device App 20060270184 - Shin; Hyeon Sang | 2006-11-30 |
Method of fabricating flash memory device App 20060205152 - Shin; Hyeon Sang | 2006-09-14 |
Method of forming a floating gate in a flash memory device Grant 6,955,957 - Shin October 18, 2 | 2005-10-18 |
Method for manufacturing flash device App 20050130376 - Shin, Hyeon Sang | 2005-06-16 |
Method for forming metal interconnections for flash memory device Grant 6,849,503 - Shin February 1, 2 | 2005-02-01 |
Method of forming a floating gate in a flash memory device App 20040152251 - Shin, Hyeon Sang | 2004-08-05 |
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