SHIMOYAMA; Kenji
Patent Applications and Registrations
Patent applications and USPTO patent grants for SHIMOYAMA; Kenji.The latest application filed is for "gan substrate wafer and method for manufacturing same".
- SHIMOYAMA; Kenji - Tokyo JP
- Shimoyama; Kenji - Kobe JP
- SHIMOYAMA; Kenji - Kobe-shi Hyogo
- Shimoyama; Kenji - Ushiku JP
- Shimoyama; Kenji - Ushiku-shi JP
- Shimoyama; Kenji - Ibaraki JP
- Shimoyama; Kenji - Ibaraki-ken JP
- Shimoyama, Kenji - Ushiku-City JP
- Shimoyama; Kenji - Tsuchiura JP
| Patent | Date |
|---|---|
| Gan Substrate Wafer And Method For Manufacturing Same App 20220084819 - ISO; Kenji ; et al. | 2022-03-17 |
| Grinding material and production method of grinding material Grant 11,027,398 - Saito , et al. June 8, 2 | 2021-06-08 |
| Grinding Material And Production Method Of Grinding Material App 20180185985 - SAITO; Kazuo ; et al. | 2018-07-05 |
| Gallium nitride-based light emitting diode Grant 9,853,182 - Choi , et al. December 26, 2 | 2017-12-26 |
| Conductive paste Grant 9,783,708 - Matsui , et al. October 10, 2 | 2017-10-10 |
| Bonding composition Grant 9,365,592 - Watanabe , et al. June 14, 2 | 2016-06-14 |
| High efficiency light emitting diode and method of fabricating the same Grant 9,362,449 - Kim , et al. June 7, 2 | 2016-06-07 |
| Composition For Metal Bonding App 20160121432 - Watanabe; Tomofumi ; et al. | 2016-05-05 |
| Nitride light-emitting diode element and method of manufacturing same Grant 9,257,595 - Haruta , et al. February 9, 2 | 2016-02-09 |
| Bonding Composition App 20150252060 - Watanabe; Tomofumi ; et al. | 2015-09-10 |
| Conductive Paste App 20150232709 - Matsui; Miki ; et al. | 2015-08-20 |
| Method For Producing M-plane Nitride-based Light-emitting Diode App 20150125980 - Kurihara; Kaori ; et al. | 2015-05-07 |
| Gallium Nitride-based Light Emitting Diode App 20140361247 - CHOI; Seung Kyu ; et al. | 2014-12-11 |
| High Efficiency Light Emitting Diode And Method Of Fabricating The Same App 20140353582 - KIM; Chang Yeon ; et al. | 2014-12-04 |
| Composition For Bonding App 20140312285 - Takesue; Masafumi ; et al. | 2014-10-23 |
| Nitride Light-emitting Diode Element And Method Of Manufacturing Same App 20140103391 - HARUTA; Yuki ; et al. | 2014-04-17 |
| Nitride Semiconductor Crystal And Production Process Thereof App 20120112320 - KUBO; Shuichi ; et al. | 2012-05-10 |
| Gallium nitride-based material and method of manufacturing the same Grant 7,794,541 - Shibata , et al. September 14, 2 | 2010-09-14 |
| Gallium Nitride-based Material And Method Of Manufacturing The Same App 20100162945 - Shibata; Hiroyuki ; et al. | 2010-07-01 |
| Gallium Nitride-based Material App 20100140536 - SHIBATA; Hiroyuki ; et al. | 2010-06-10 |
| Gallium Nitride-based Material And Method Of Manufacturing The Same App 20090081110 - Shibata; Hiroyuki ; et al. | 2009-03-26 |
| III-V compound semiconductor crystals App 20050230672 - Kurihara, Kaori ; et al. | 2005-10-20 |
| Semiconductor optical device apparatus Grant 6,807,213 - Shimoyama , et al. October 19, 2 | 2004-10-19 |
| Semiconductor device and method for manufacturing the same Grant 6,744,066 - Shimoyama , et al. June 1, 2 | 2004-06-01 |
| Semiconductor light-emitting device Grant 6,707,071 - Hashimoto , et al. March 16, 2 | 2004-03-16 |
| Semiconductor light-emitting device App 20040041162 - Shimoyama, Kenji ; et al. | 2004-03-04 |
| Semiconductor light-emitting device Grant 6,639,926 - Shimoyama , et al. October 28, 2 | 2003-10-28 |
| Semiconductor light-emitting device App 20020125488 - Hashimoto, Makiko ; et al. | 2002-09-12 |
| Semiconductor device and method for manufacturing the same App 20020014622 - Shimoyama, Kenji ; et al. | 2002-02-07 |
| Semiconductor device and method for manufacturing the same App 20010040236 - Shimoyama, Kenji ; et al. | 2001-11-15 |
| Semiconductor light-emitting devices Grant 6,278,137 - Shimoyama , et al. August 21, 2 | 2001-08-21 |
| Semiconductor light-emitting devices Grant 5,811,839 - Shimoyama , et al. September 22, 1 | 1998-09-22 |
| Semiconductor device having contact resistance reducing layer Grant 5,804,834 - Shimoyama , et al. September 8, 1 | 1998-09-08 |
| Method of preparing compound semiconductor Grant 5,622,559 - Goto , et al. April 22, 1 | 1997-04-22 |
| Semiconductor laser diode Grant 5,619,518 - Horie , et al. April 8, 1 | 1997-04-08 |
| Semiconductor laser element Grant 5,355,384 - Inoue , et al. October 11, 1 | 1994-10-11 |
| Divided electrode type semiconductor laser device Grant 5,018,159 - Suzuki , et al. May 21, 1 | 1991-05-21 |
| Epitaxial substrate for high-intensity led, and method of manufacturing same Grant 4,902,356 - Noguchi , et al. February 20, 1 | 1990-02-20 |
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